Semiconductor Cleaning Liquid for Cobalt CMP Residue Removal
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Solution Overview
Problem
Existing cleaning liquids for semiconductor substrates after chemical mechanical polishing (CMP) face challenges in achieving both effective cleaning and corrosion prevention, particularly when dealing with cobalt-containing materials.
Innovation Solution
A cleaning liquid comprising specific amine compounds, such as those with a 1,4-butanediamine skeleton and 1,3-propanediamine structure, along with an anticorrosive agent, is formulated to maintain a pH of 8.0 to 11.0, enhancing both cleaning performance and corrosion prevention.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a cleaning liquid is used to remove residues from semiconductor substrates after CMP, then cleaning performance is improved, but corrosion of cobalt-containing metal films occurs
Solution Approach 1:
The invention changes the chemical parameters of the cleaning liquid by specifying precise pH ranges (8.0-11.0) and defining exact compositional ratios between amine compounds and corrosion prevention agents. This parameter optimization enables the liquid to effectively remove residues while maintaining corrosion prevention, resolving the contradiction between cleaning performance and metal film protection
Solution Approach 2:
The invention creates a composite cleaning liquid formulation that combines multiple components: amine compounds (for cleaning), corrosion prevention agents (for protection), and hydrogen peroxide (for oxidation). This composite approach allows the liquid to simultaneously achieve residue removal and corrosion prevention by leveraging the synergistic effects of different chemical components
2Manufacturing precision
If the pH of the cleaning liquid is increased to improve residue removal, then cleaning performance is improved, but corrosion prevention capability deteriorates
Solution Approach 1:
The invention optimizes the pH parameter within a specific range (8.0-11.0) and controls the concentration ratios of alkaline components to achieve the desired balance. By precisely adjusting these parameters, the cleaning liquid maintains high residue removal efficiency while preserving corrosion prevention capability through controlled chemical reactivity
3Manufacturing precision
If conventional cleaning liquids are used on cobalt-containing substrates, then general cleaning is achieved, but specific cleaning performance and corrosion prevention cannot be simultaneously obtained
Solution Approach 1:
The invention tailors the chemical composition of the cleaning liquid specifically for cobalt-containing substrates by incorporating corrosion prevention agents in defined ratios. This localized optimization of chemical properties ensures the liquid is specifically adapted to handle cobalt materials, achieving both effective cleaning and corrosion prevention that conventional generic cleaners cannot provide
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides excellent cleaning performance and corrosion prevention for semiconductor substrates with cobalt-containing matter, effectively removing residues while minimizing surface corrosion.
Implementation Method 1
a cleaning liquid comprising: an amine compound Y0 that is at least one selected from the group consisting of: a compound Y1 represented by a general formula (Y1); and a compound Y2 having a 1,4-butanediamine skeleton, wherein the cleaning liquid has a pH of 8.0 to 11.0
Implementation Method 2
the cleaning liquid further contains an anticorrosive
Data Source
AI summary
There is provided a cleaning liquid excellent in cleaning performance and corrosion prevention performance in application as a cleaning liquid for semiconductor substrates that contain cobalt-containing matter and that have undergone a chemical mechanical polishing process. There is also provided a method of cleaning a semiconductor substrate having undergone a chemical mechanical polishing process. The cleaning liquid is for a semiconductor substrate having undergone a chemical mechanical polishing process, and contains an amine compound Y0 that is at least one selected from the group consisting of: a compound Y1 represented by a general formula (Y1); and a compound Y0 having a 1,4-butanediamine skeleton. The cleaning liquid has a pH of 8.0 to 11.0.