Cobalt Complex for Low Resistance Thin Films
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Solution Overview
Problem
The challenge is to produce a cobalt-containing thin film for next-generation semiconductor elements without using oxidizing gases, which are known to increase resistance and hinder conductivity.
Innovation Solution
A cobalt complex represented by a specific formula is used in a vapor phase deposition method with a reducing gas, allowing for the formation of a cobalt-containing thin film on three-dimensional substrates, suitable for applications like gate electrodes, contacts, and copper wiring layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If oxidizing gas is used in vapor phase deposition, then decomposition of precursor occurs, but resistance increases and conductivity deteriorates
Solution Approach 1:
The patent employs a reducing atmosphere (hydrogen or ammonia gas) instead of oxidizing atmosphere during vapor phase deposition. This inert/reducing environment prevents oxidation of the cobalt-containing thin film and substrate, thereby maintaining low resistance and high conductivity while enabling successful film formation through precursor decomposition.
2Reliability
If reducing gas is used instead of oxidizing gas, then conductivity is improved, but decomposition of conventional precursors becomes insufficient
Solution Approach 1:
The patent modifies the chemical structure of the precursor molecule by introducing a β-diketimine ligand with specific functional groups. This structural parameter change increases the decomposition temperature and reactivity of the precursor, enabling effective film formation under reducing gas atmosphere where conventional precursors would fail to decompose sufficiently.
3Reliability
If conventional precursors are used in reducing atmosphere, then conductivity is maintained, but film formation fails due to insufficient decomposition
Solution Approach 1:
The patent changes the chemical parameters of the precursor by using a cobalt complex with β-diketimine ligand containing alkoxy or aryloxy groups. This modification raises the decomposition temperature and enhances reactivity, allowing the precursor to decompose efficiently in reducing atmosphere at elevated temperatures, thereby achieving both good conductivity and high film formation efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the production of cobalt-containing thin films with improved conductivity and reduced resistance, suitable for advanced semiconductor devices without the need for oxidizing gases, enhancing the performance and reliability of semiconductor elements.
Implementation Method 1
a vapor phase deposition method based on chemical reaction
Implementation Method 2
decomposition gas
Implementation Method 3
under conditions in which a reducing gas is used
Data Source
Figure 1
AI summary
Provided is a cobalt complex which is useful for the production of a cobalt-containing thin film under conditions where no oxidizing gas is used. A cobalt complex represented by general formula (1) (wherein R1 represents a silyloxy group represented by general formula (2) (wherein R6, R7 and R8 independently represent an alkyl group having 1 to 6 carbon atoms); R2 represents a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or a silyloxy group represented by general formula (2); R3, R4 and R5 independently represent a hydrogen atom or an alkyl group having 1 to 6 carbon atoms; and L represents a diene having 4 to 10 carbon atoms) is used.