Cobalt Compound Ligand Design for High-Quality ALD Thin Films
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Solution Overview
Problem
Existing cobalt compounds used in thin-film formation methods do not adequately produce high-quality thin-films, lacking essential properties for optimal film quality and productivity.
Innovation Solution
A cobalt compound with a specific structure, represented by general formula (1), is developed, suitable for use as a thin-film forming raw material, particularly in ALD methods, ensuring high vapor pressure, low melting point, and thermal stability for producing high-quality thin-films.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional cobalt compounds are used as thin-film forming raw materials, then the production process can be implemented, but the film quality is insufficient and does not meet high-quality requirements
Solution Approach 1:
The invention changes the chemical structure parameters of the cobalt compound by introducing specific ligand combinations (beta-diketonate with amine or amino alcohol), which fundamentally alters the vapor pressure, thermal stability, and decomposition characteristics of the raw material, thereby achieving high-quality thin-film formation while maintaining productivity
Solution Approach 2:
The invention creates a composite coordination compound structure where cobalt is coordinated with multiple types of ligands (beta-diketonate and amine/amino alcohol), forming a composite material that combines the advantages of different ligand types to achieve both high film quality and satisfactory productivity
2Manufacturing precision
If existing cobalt compounds are vaporized for deposition, then the deposition process can proceed, but the compound lacks essential properties for optimal film quality and productivity
Solution Approach 1:
The invention optimizes the physical and chemical parameters of the cobalt compound including vapor pressure (0.01 to 10 mmHg at deposition temperature), thermal stability (decomposition temperature 100-300°C higher than deposition temperature), and molecular weight (50-200 g/mol), achieving both high film quality and satisfactory productivity
Solution Approach 2:
The invention introduces different functional groups at specific positions around the cobalt center - beta-diketonate ligands provide thermal stability while amine or amino alcohol ligands provide appropriate vapor pressure, creating local functional differentiation that achieves overall optimal performance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The cobalt compound achieves high-quality thin-film production with satisfactory productivity, suitable for various deposition methods including ALD, CVD, and MOD, enhancing film quality and efficiency.
Implementation Method 1
chemical vapor deposition (hereinafter sometimes simply referred to as 'CVD') methods including an atomic layer deposition (ALD) method
Implementation Method 2
a coating thermal decomposition method
Data Source
AI summary
Provided is a cobalt compound represented by the following general formula (1):where R1 to R7 each independently represent a hydrogen atom, a halogen atom, an alkyl group having 1 to 5 carbon atoms, a fluorine atom-containing alkyl group having 1 to 5 carbon atoms, a group represented by the following general formula (L-1), or a group represented by the following general formula (L-2);where R8 to R10 each independently represent an alkyl group having 1 to 5 carbon atoms, A1 and A2 each independently represent an alkanediyl group having 1 to 5 carbon atoms, and * represents a bonding site.