Cobalt-Copper Composite Wire for Semiconductor Integration
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving high integration and low power consumption due to limitations in wire resistance and electromigration tolerance, necessitating improved materials and fabrication methods.
Innovation Solution
The use of a cobalt film in semiconductor devices, combined with specific electroplating methods and conductive liners, enhances the performance and reliability by forming structured cobalt layers within the devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If copper is used as wire material to achieve high conductivity, then electrical conductivity is improved, but electromigration tolerance deteriorates
Solution Approach 1:
The patent employs a composite wire structure consisting of a cobalt film layer and a copper fill layer. The cobalt film provides electromigration tolerance and adhesion, while the copper fill provides high conductivity. This composite structure resolves the contradiction by combining materials with complementary properties to achieve both reliability and low energy loss.
2Productivity
If down-scaling of semiconductor devices is accelerated to achieve high integration, then device density is improved, but wire resistance increases
Solution Approach 1:
The composite wire structure with copper fill compensates for increased wire resistance in scaled-down devices. The high conductivity of copper offset the resistance increase caused by smaller dimensions, enabling continued down-scaling without sacrificing electrical performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the electrical conductivity and reliability of semiconductor devices by optimizing the cobalt film structure, addressing the demands for high integration and low power consumption.
Implementation Method 1
a first film disposed on the barrier conductive film and in the opening, the first film including cobalt, and a conductive liner on the barrier conductive film, the conductive liner extending along a portion of a sidewall of the opening and including a first metal other than cobalt
Data Source
AI summary
A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes an interlayer insulating film on a substrate, the interlayer insulating film including an opening, a barrier conductive film extending along a sidewall of the opening and a bottom surface exposed by the opening, a first film disposed on the barrier conductive film and in the opening, and the first film including cobalt, and a conductive liner on the barrier conductive film, the conductive liner extending along a portion of a side all of the opening and including a metal other than cobalt.