Cobalt Precursor for Low-Carbon Semiconductor Layers
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Solution Overview
Problem
The increasing demand for highly integrated and high-speed semiconductor devices poses challenges in eliminating defects and efficiently manufacturing cobalt-containing layers, particularly due to limitations in the exposing process and the need for precise pattern definition.
Innovation Solution
A novel cobalt precursor, represented by specific chemical formulas, is used in a deposition process to form a cobalt-containing layer, which involves mixing certain compounds and using them in chemical vapor deposition or atomic layer deposition to achieve a cobalt layer with reduced carbon content and improved electrical properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional deposition methods are used to form cobalt-containing layers, then the manufacturing process is simple, but the carbon content in the deposited layer is high which degrades electrical properties
Solution Approach 1:
The patent changes the chemical parameters of the deposition process by using a specifically designed precursor compound (Formula 1 or 2) with controlled ligand structures. This precursor formulation enables deposition at lower temperatures and results in cobalt layers with significantly reduced carbon content compared to conventional precursors, thereby improving electrical properties while maintaining manufacturing simplicity
Solution Approach 2:
The patent replaces conventional high-energy deposition methods with a chemical vapor deposition approach using the novel precursor. This substitution allows for lower processing temperatures and better control over carbon incorporation, achieving high-purity cobalt layers without requiring complex post-deposition processing
2Productivity
If the exposing process is used to define patterns for highly integrated semiconductor devices, then device integration is improved, but process margin decreases making defect elimination difficult
Solution Approach 1:
The patent applies preliminary action by optimizing the deposition process parameters and precursor chemistry before the actual pattern formation. The controlled deposition conditions and improved layer quality reduce the likelihood of defects, providing a more robust foundation for subsequent high-resolution patterning processes and effectively increasing process margin
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enables the formation of cobalt-containing layers with high cobalt content and low carbon impurities, facilitating improved electrical properties and efficient semiconductor device manufacturing.
Implementation Method 1
performing a deposition process using a cobalt precursor selected from the group consisting of the compound of Formula 1 and the compound of Formula 2
Implementation Method 2
performing a deposition process using a cobalt precursor selected from the group consisting of the compound of Formula 1 and the compound of Formula 2
Data Source
AI summary
The inventive concept relates to a cobalt precursor, a method for manufacturing a cobalt-containing layer using the same, and a method for manufacturing a semiconductor device using the same. More particularly, the cobalt precursor of the inventive concept includes at least one compound selected from the group consisting of a compound of Formula 1 and a compound of Formula 2.