Integrated Multi-Chamber System for Cobalt Silicide Formation
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Solution Overview
Problem
Current methods for forming cobalt silicide layers in semiconductor manufacturing face challenges such as contamination, oxidation, and increased processing complexity, particularly when integrating cobalt and silicon, which can lead to device malformation and short circuits due to the need for multiple processing steps and separate equipment for different deposition and annealing processes.
Innovation Solution
A method involving chemical vapor deposition or atomic layer deposition processes to form cobalt silicide layers on a substrate, with precleaning, annealing, and deposition of metallic cobalt and barrier materials in a single integrated multi-chamber system, reducing the need for transfer between chambers and minimizing contamination risks.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If multiple separate processing steps and equipment are used for deposition and annealing, then processing flexibility is maintained, but processing complexity increases and substrate throughput decreases
Solution Approach 1:
The patent combines multiple separate processing chambers (deposition chamber, annealing chamber, etching chamber) into a single integrated multi-chamber system. This allows sequential deposition of cobalt and silicon layers, in-situ annealing to form cobalt silicide, and selective etching of unreacted cobalt without breaking vacuum or transferring substrates between separate equipment, thereby reducing processing complexity and improving substrate throughput.
Solution Approach 2:
The integrated processing system performs multiple functions within a single system: physical vapor deposition of metal layers, thermal annealing for silicide formation, and plasma etching for selective removal. This multi-functional approach eliminates the need for separate specialized equipment while maintaining process quality and reducing overall system complexity.
2Reliability
If substrates are transferred between separate chambers for deposition and annealing, then process specialization is maintained, but contamination and oxidation risks increase
Solution Approach 1:
The system maintains a controlled inert atmosphere (vacuum environment) throughout all processing steps by keeping the substrate within the sealed multi-chamber system. This prevents oxidation of deposited cobalt and silicon layers during transfer and processing, improving substrate reliability while the integrated design keeps processing complexity manageable.
3Manufacturing precision
If cobalt and silicon are integrated in multiple processing steps, then material quality is improved, but processing time and complexity increase
Solution Approach 1:
The system performs preliminary deposition of cobalt and silicon layers with precise thickness control before annealing. This preliminary preparation ensures optimal material quality and composition, while the subsequent in-situ annealing process efficiently forms the desired cobalt silicide structure without requiring additional intermediate processing steps, thereby reducing overall processing time.
Solution Approach 2:
The processing sequence maintains continuous useful action by performing deposition, annealing, and etching in sequential steps without breaking vacuum or transferring substrates between separate systems. This continuous processing maintains material quality through precise control while minimizing idle time and reducing total processing time.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances processing efficiency, reduces complexity, and improves substrate throughput by allowing for in-situ deposition and annealing of cobalt silicide layers without breaking vacuum, thereby improving the reliability and consistency of semiconductor device fabrication.
Implementation Method 1
depositing a cobalt silicide material on the silicon-containing surface during a chemical vapor deposition process or an atomic layer deposition process
Implementation Method 2
depositing a cobalt silicide material on the silicon-containing surface during a chemical vapor deposition process or an atomic layer deposition process
Implementation Method 3
expose the substrate to an annealing process
Data Source
AI summary
Embodiments of the invention described herein generally provide methods and apparatuses for forming cobalt silicide layers, metallic cobalt layers, and other cobalt-containing materials. In one embodiment, a method for forming a cobalt silicide containing material on a substrate is provided which includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, depositing a metallic cobalt material on the cobalt silicide material, and depositing a metallic contact material on the substrate. In another embodiment, a method includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, expose the substrate to an annealing process, depositing a barrier material on the cobalt silicide material, and depositing a metallic contact material on the barrier material.