CMP Composition Using Cocoon-Shaped Particles and Carbonate Salts
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Solution Overview
Problem
Current chemical mechanical polishing (CMP) compositions in the semiconductor industry face challenges in achieving high material removal rates for certain substrates like tantalum nitride while maintaining low removal rates for copper and low-k materials, while also ensuring safe handling and minimizing hazardous by-products, and require stable formulations with minimal phase separation.
Innovation Solution
A CMP composition comprising cocoon-shaped inorganic or organic particles, a non-ionic surfactant, a carbonate or hydrogen carbonate salt, and an alcohol in an aqueous medium, which provides improved polishing performance and selectivity between different materials, and is designed to be stable and easy to handle.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional CMP compositions are used, then polishing process is simple, but material removal rate for barrier layers is insufficient while maintaining low removal for copper and low-k materials
Solution Approach 1:
The invention changes the chemical parameters of the CMP composition by incorporating specific carbonate salts (sodium carbonate, potassium carbonate, or ammonium carbonate) at controlled concentrations (0.01-5 wt%). This parameter change enables simultaneous achievement of high barrier layer removal rate and selective protection of copper and low-k materials through optimized chemical reactivity and pH control
Solution Approach 2:
The invention creates a composite CMP composition system combining carbonate salts with surfactants (anionic, cationic, or non-ionic types) and abrasive particles. This composite formulation synergistically enhances barrier layer removal while maintaining selectivity, as the carbonate-surfactant interaction modifies the chemical-mechanical polishing behavior to differentiate between material types
2Reliability
If CMP composition achieves high selectivity and stable formulation, then polishing performance is improved, but formulation complexity increases
Solution Approach 1:
The invention optimizes pH parameters within a specific range (8-11) using carbonate salts as pH buffers. This parameter control ensures formulation stability and prevents phase separation while maintaining consistent polishing performance. The carbonate buffer system naturally resists pH changes, providing inherent stability without requiring complex stabilizing additives
Solution Approach 2:
The carbonate salt acts as an intermediary substance that mediates between the abrasive particles, surfactants, and substrate materials. It facilitates stable dispersion of components and prevents unwanted interactions that could cause phase separation, while its buffering capacity maintains chemical stability throughout the polishing process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The CMP composition achieves high material removal rates for barrier layers, low removal rates for copper and low-k materials, and maintains high selectivity, while ensuring stability and safety, with a long shelf life and cost-effective application.
Implementation Method 1
a non-ionic surfactant
Implementation Method 2
a carbonate or hydrogen carbonate salt
Implementation Method 3
inorganic particles, organic particles, or a mixture or composite thereof, wherein the particles are cocoon-shaped
Data Source
AI summary
A chemical mechanical polishing (CMP) composition (Q) comprising(A) Inorganic particles, organic particles, or a mixture or composite thereof, wherein the particles are cocoon-shaped(B) a non-ionic surfactant,(C) a carbonate or hydrogen carbonate salt,(D) an alcohol, and(M) an aqueous medium.