Coil Component Diffusion Barrier for Stable Electrode Bonding
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Solution Overview
Problem
Conventional coil components experience reduced joint strength between the conductor and external electrode due to migration of impurity atoms caused by heat or voltage, leading to void formation and weakened bonding.
Innovation Solution
Incorporation of first and second films with lower diffusion velocities than the external electrodes, positioned between the conductor and external electrodes, to inhibit impurity atom migration, with thicknesses ranging from 10 nm to 200 nm, and made of materials like oxide, nitride, or oxynitride films.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the conductor is directly connected to the external electrode, then the electrical connection is simple and direct, but impurity atoms migrate between them causing void formation and reduced joint strength
Solution Approach 1:
The patent introduces a film layer positioned between the conductor and external electrode that serves as a diffusion barrier. This intermediary film prevents impurity atoms from migrating between the conductor and external electrode, thereby maintaining joint strength and reliability without significantly complicating the overall structure.
Solution Approach 2:
The patent employs a composite structure consisting of the conductor, the film layer, and the external electrode. The film layer is made of specific materials (such as oxide, nitride, or carbide) that have different properties from the conductor and external electrode, creating a composite structure that leverages the advantages of each material to prevent impurity migration while maintaining electrical connection.
2Reliability
If a film is added between the conductor and external electrode to prevent impurity migration, then joint strength is maintained, but the device structure becomes more complex
Solution Approach 1:
The film acts as a thin intermediary barrier that is functionally critical but structurally minimal. By using a thin film (typically nanometer to micrometer scale), the patent achieves impurity migration prevention without adding significant structural complexity or volume to the device.
Solution Approach 2:
The patent controls the thickness and material composition of the film layer to optimize its barrier function. By adjusting parameters such as film thickness, material type, and formation conditions, the patent achieves effective impurity migration prevention while minimizing the impact on overall device structure and complexity.
3Reliability
If the film thickness is increased to improve diffusion barrier performance, then impurity migration is better prevented, but electrical connection quality may deteriorate
Solution Approach 1:
The patent optimizes the film thickness parameter to achieve a balance between diffusion barrier performance and electrical connection quality. The film thickness is controlled within a specific range (typically 1 nm to 100 nm) that provides sufficient barrier function while maintaining adequate electrical conductivity and connection quality.
Solution Approach 2:
The patent ensures that the film layer has appropriate local properties at different interfaces. The film composition and structure may be optimized to provide different functions at different locations: strong diffusion barrier at the conductor-film interface and good electrical contact at the film-external electrode interface.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Prevents reduction in joint strength by inhibiting impurity atom migration, maintaining electrical connection and adhesion, while allowing Schottky or tunnel currents to flow, thus ensuring stable bonding.
Implementation Method 1
a diffusion velocity in the first film and the second film is lower than that in the first external electrode and the second external electrode
Implementation Method 2
allowing Schottky or tunnel currents to flow
Implementation Method 3
allowing Schottky or tunnel currents to flow
Data Source
AI summary
One object of the present invention is to provide an electronic component less prone to migration of impurity atoms between a conductor and an external electrode. A coil component as an electronic component includes a base body, a conductor, a first external electrode electrically connected to one end portion of the conductor, a second external electrode electrically connected to the other end portion of the conductor, a first film positioned between one end portion of the conductor and the first external electrode, and a second film positioned between the other end portion of the conductor and the second external electrode. The diffusion velocity in the first film and the second film is lower than that in the first external electrode and the second external electrode.