Semiconductor Coil Layout With Electric Field Shield for Surge Isolation
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Solution Overview
Problem
Existing semiconductor devices face challenges in enhancing voltage resistance between high voltage coils and low potential portions due to dielectric breakdown occurring in horizontal directions, despite sufficient distance and insulation in the vertical direction.
Innovation Solution
Incorporating an electric field shield portion composed of electrode plates between the high voltage coil and low voltage region, which relaxes electric field concentration and prevents surge breakdown.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an insulating film is used between high voltage coil and low voltage region, then insulation is provided, but dielectric breakdown occurs in horizontal direction under high voltage surge
Solution Approach 1:
An electric field shield portion is introduced as an intermediary element between the high voltage coil and the low voltage region. This shield portion, positioned in the horizontal direction, intercepts and redistributes the electric field lines, preventing direct field concentration at the insulating film interface and thereby eliminating the dielectric breakdown pathway while maintaining the original insulating film structure.
Solution Approach 2:
The invention changes the electric field distribution parameter by introducing the electric field shield portion. This structural modification alters the electric field lines' path and intensity distribution in the horizontal direction, reducing peak field strength at critical insulation points and preventing surge breakdown without requiring changes to the insulating film material or thickness.
2Reliability
If distance between high voltage coil and low voltage region is increased, then voltage resistance is improved, but device area increases
Solution Approach 1:
Instead of increasing the horizontal distance between high voltage coil and low voltage region, the invention introduces the electric field shield portion that operates in the horizontal plane to manage electric field distribution. This allows maintaining compact device area while achieving enhanced voltage resistance through field manipulation rather than spatial separation.
Solution Approach 2:
The electric field shield portion serves as a mediator that enables safe proximity between high voltage and low voltage regions. By positioning this shield element horizontally between the coil and low voltage region, the design achieves adequate electrical isolation without requiring increased spacing, thus maintaining compact device footprint.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The electric field shield portion effectively enhances voltage resistance by reducing horizontal dielectric breakdown, ensuring reliable operation under high voltage conditions.
Implementation Method 1
a low potential portion which is provided in a low voltage region disposed around a high voltage region for the high voltage coil in planar view and is connected with potential lower than the high voltage coil, and an electric field shield portion which is disposed between the high voltage coil and the low voltage region
Data Source
AI summary
The semiconductor device of the present invention includes an insulating layer, a high voltage coil and a low voltage coil which are disposed in the insulating layer at an interval in the vertical direction, a low potential portion which is provided in a low voltage region disposed around a high voltage region for the high voltage coil in planar view and is connected with potential lower than the high voltage coil, and an electric field shield portion which is disposed between the high voltage coil and the low voltage region and includes an electrically floated metal member.