Cold-Sprayed Aluminum Coating for Plasma Chamber Corrosion
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Solution Overview
Problem
In semiconductor material processing, aluminum alloys used in plasma processing chambers face corrosion issues due to aggressive gases, leading to metal contamination and reduced part lifetimes, necessitating a corrosion-resistant coating that minimizes particle and metal contamination.
Innovation Solution
A high-purity cold-sprayed aluminum coating with an optional anodized layer is applied to plasma processing chamber components, providing a dense, porosity-free, and adherent barrier that reduces metal contamination and enhances corrosion resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If aluminum alloys are used as plasma processing chamber materials, then good formability and weldability are achieved, but metal contamination and corrosion resistance are insufficient
Solution Approach 1:
The invention applies a multi-layer composite coating structure consisting of a transition layer (aluminum alloy or intermetallic compound) and a top layer (pure aluminum or aluminum alloy). This composite structure combines the advantages of the substrate material with the protective properties of the coating, providing both mechanical integrity and corrosion resistance while minimizing metal contamination to semiconductor wafers.
2Reliability
If aluminum alloys undergo surface modification to form corrosion-resistant coatings, then corrosion resistance and part lifetimes are improved, but manufacturing complexity increases
Solution Approach 1:
The invention applies different material compositions and properties to different layers of the coating system. The transition layer is designed with specific aluminum alloy compositions or intermetallic compounds to provide adhesion and corrosion resistance, while the top layer uses pure aluminum or specific aluminum alloys to minimize contamination. This local differentiation of material properties optimizes both corrosion resistance and contamination control.
3Object-affected harmful factors
If pure aluminum coating is applied to reduce metal contamination, then contamination levels are reduced, but adhesion and mechanical properties deteriorate
Solution Approach 1:
The invention applies a transition layer before the pure aluminum top layer to prepare the substrate surface. This transition layer, composed of aluminum alloy or intermetallic compounds, creates a graded interface that improves adhesion between the substrate and the pure aluminum coating. The preliminary application of this intermediate layer ensures both strong bonding and minimal contamination in the final coating system.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The cold-sprayed aluminum coating significantly reduces metal contamination and extends component lifetimes by forming a superior impurity and gas diffusion barrier, maintaining mechanical properties and preventing Fe and other metal contaminant leaching, while allowing for easy machining and anodization for enhanced corrosion resistance.
Implementation Method 1
The cold-sprayed aluminum coating significantly reduces metal contamination and extends component lifetimes by forming a superior impurity and gas diffusion barrier
Implementation Method 2
the aluminum coating can be optionally anodized to form an anodized coating on the cold-sprayed aluminum coating
Data Source
AI summary
Components of semiconductor material processing chambers are disclosed, which may include a substrate and at least one corrosion-resistant coating formed on a surface thereof. The at least one corrosion-resistant coating is a high purity metal coating formed by a cold-spray technique. An anodized layer can be formed on the high purity metal coating. The anodized layer comprises a process-exposed surface of the component. Semiconductor material processing apparatuses including one or more of the components are also disclosed, the components being selected from the group consisting of a chamber liner, an electrostatic chuck, a focus ring, a chamber wall, an edge ring, a plasma confinement ring, a substrate support, a baffle, a gas distribution plate, a gas distribution ring, a gas nozzle, a heating element, a plasma screen, a transport mechanism, a gas supply system, a lift mechanism, a load lock, a door mechanism, a robotic arm and a fastener. Methods of making the components and methods of plasma processing using the components are also disclosed.


