Collector Electrode Depressions for Stable Pellet Bonding
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Solution Overview
Problem
Current semiconductor devices face challenges in ensuring reliable electrical coupling and heat dissipation between the collector electrode and the pellet, which can lead to short circuits and degradation in reliability due to inadequate bonding material thickness and uneven surface interactions during manufacturing.
Innovation Solution
The semiconductor device incorporates depressions in the collector electrode to embed bonding material, ensuring a minimum thickness of 100 μm to 500 μm, and optionally uses spherical nickel to maintain thickness and prevent air entrapment, while projections or grooves support the pellet and prevent stress on the collector electrode.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If bonding material is applied between the collector electrode and pellet without surface depressions, then the manufacturing process is simple, but the bonding material thickness is insufficient and unreliable electrical coupling occurs
Solution Approach 1:
The collector electrode surface is modified with depressions at specific locations where bonding material needs to be retained. This local modification ensures adequate bonding material thickness only where required for reliable electrical coupling, while maintaining simplicity in other areas of the electrode structure.
Solution Approach 2:
Depressions are formed on the collector electrode surface before bonding material application. This preliminary action creates predetermined retention spaces that ensure the bonding material achieves sufficient thickness during the subsequent bonding process, preventing insufficient coupling without requiring complex post-processing.
2Reliability
If bonding material is applied to ensure minimum thickness, then electrical coupling reliability improves, but air entrapment occurs causing voids and degradation
Solution Approach 1:
Spherical nickel particles are incorporated into the bonding material. These spherical elements prevent air entrapment by facilitating air escape during bonding while maintaining the minimum required bonding material thickness, thus eliminating voids without compromising coupling reliability.
Solution Approach 2:
Spherical nickel acts as an intermediary substance within the bonding material. It mediates between the requirement for adequate bonding material thickness and the need to prevent air entrapment, allowing air to escape through the spherical structures while maintaining reliable electrical coupling.
3Reliability
If spherical nickel is added to bonding material, then air entrapment is prevented and thickness is maintained, but manufacturing complexity increases
Solution Approach 1:
The bonding material composition is modified by incorporating spherical nickel particles with specific size parameters (5 μm to 50 μm diameter). This parameter change enables the bonding material to maintain minimum thickness while preventing air entrapment, achieving reliable bonding with a relatively simple additive manufacturing approach.
4Manufacturing precision
If the collector electrode surface is left flat, then manufacturing is simple, but bonding material thickness is uneven causing short circuits
Solution Approach 1:
Rather than making the entire collector electrode surface complex, depressions are created only in specific local areas where bonding material retention is critical. This localized surface modification achieves uniform bonding material thickness where needed while keeping the overall electrode structure simple and manufacturable.
Data Source
AI summary
According to one embodiment, a semiconductor device includes a pellet; a first conductor and a second conductor between which the pellet is interposed in a first direction; a first bonding material that bonds the pellet and the first conductor; and a second bonding material that bonds the pellet and the second conductor. A first surface of the first conductor facing the pellet has a depression.


