Colloidal Particle Ink Patterning Without Luminescence Damage
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Solution Overview
Problem
Conventional patterning processes for colloidal particles, such as quantum dots, face challenges in maintaining high fidelity and luminescent properties due to high-energy irradiation and high-temperature treatments, leading to potential damage and degradation of nanostructured materials.
Innovation Solution
A colloidal particle ink composition using a low-temperature-active crosslinker, which forms chemical crosslinks without high-temperature treatments, ensuring the preservation of luminescent properties and enabling high-fidelity patterning through indirect photopatterning methods.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional photolithography with etching is used, then high-resolution patterns can be formed, but luminescence properties of quantum dots degrade due to defects created during etching
Solution Approach 1:
The patent extracts and removes the harmful etching step from the conventional photolithography process. By using direct photopatterning with photoresist and developer solution, the method achieves high-resolution patterning without the physical or chemical etching that damages quantum dot luminescence properties
Solution Approach 2:
The patent introduces photoresist as an intermediary material that enables pattern transfer without direct etching of the quantum dot layer. The photoresist undergoes photochemical transformation upon UV irradiation, allowing selective removal of unexposed areas through development, thereby forming patterns while preserving quantum dot integrity
2Ease of manufacture
If direct photopatterning with high-energy UV irradiation is used, then patterning can be achieved, but luminescent properties may be damaged and pattern fidelity remains low
Solution Approach 1:
The patent changes the irradiation dose parameter to optimize the balance between patterning effectiveness and quantum dot preservation. By controlling the UV irradiation dose within specific ranges, the method achieves sufficient photoresist transformation for high-fidelity patterning while avoiding excessive energy input that would damage luminescent properties
3Ease of manufacture
If conventional photopatterning is used, then patterns can be formed, but line edge roughness and surface roughness are high
Solution Approach 1:
The patent optimizes multiple process parameters including irradiation dose, developer concentration, and development time to minimize line edge roughness. These parameter adjustments enable the formation of smooth, well-defined patterns with high fidelity while maintaining the simplicity of the direct photopatterning approach
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method allows for the formation of high-quality, multi-color colloidal particle patterns with reduced line edge roughness and surface roughness, maintaining excellent luminescent and electrical characteristics even after repeated patterning processes.
Implementation Method 1
thermally activated at a temperature of about 0° C. to about 130° C.
Implementation Method 2
activated by ultraviolet light of about 200 nm to about 380 nm to produce an intermediate
Data Source
AI summary
Disclosed herein are a colloidal particle ink composition, a method of forming a colloidal particle pattern by using the same, a colloidal particle patterned film, and an electronic device.