Colorimeter Metrology for Semiconductor Layer Thickness

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Solution Overview

Problem

Conventional metrology methods are inadequate for accurately measuring the thin thickness of semiconductor layers in photovoltaic devices, particularly those grown using atomic layer deposition (ALD), as they rely on optical interference which is not effective for very thin window/emitter layers.

Innovation Solution

A colorimeter metrology system is employed to measure layer thickness by analyzing absorbance and color properties, utilizing a processor with a look-up table to correlate hue and saturation of reflected light with layer thickness, and integrating a closed-loop feedback control system for real-time deposition control.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If conventional metrology methods based on optical interference are used, then measurement can be performed, but measurement precision deteriorates for very thin semiconductor layers

Engineering Contradiction:
Improvelayer thickness measurement precisionVSAvoidmeasurement reliability for thin layers
Core Design Contradiction:
Measurement precisionVSReliability

Solution Approach 1:

The invention changes the measurement parameters from optical interference-based methods to colorimetric methods based on absorbance. By measuring absorbance at specific wavelengths and converting to thickness through calibration curves, the system achieves reliable measurements for very thin layers (5-50 nm) where optical interference methods fail.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The invention replaces the optical interference measurement system with a colorimetric measurement system using a colorimeter. This substitution enables accurate thickness measurement of thin semiconductor layers by measuring light absorbance properties rather than relying on optical interference patterns.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

2Manufacturing precision

If real-time feedback control is implemented, then manufacturing precision improves, but device complexity increases

Engineering Contradiction:
Improvedeposition thickness control precisionVSAvoidcontrol system complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The invention implements a closed-loop feedback control system where the colorimeter measures layer thickness in real-time during deposition, and the deposition process is automatically adjusted based on these measurements. This feedback mechanism maintains manufacturing precision while managing system complexity through automated control.

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The system performs preliminary calibration by measuring absorbance of known thickness samples to generate calibration curves before actual deposition. This preliminary action establishes the relationship between absorbance and thickness, enabling accurate real-time control without requiring complex theoretical models during deposition.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables precise measurement and real-time feedback control of ALD layer thickness, ensuring accurate deposition and enhancing the yield and performance of photovoltaic devices.

Implementation Method 1

A colorimeter metrology system is employed to measure layer thickness by analyzing absorbance and color properties

Methodology Applied
Scientific EffectAbsorbance: Absorption (EM radiation)

Implementation Method 2

Photovoltaic devices convert the energy of sunlight directly into electricity by the photovoltaic effect

Methodology Applied
Scientific EffectPhotovoltaic effect: Photovoltaic Effect

Data Source

PatentUS8982362B2System and method for measuring layer thickness and depositing semiconductor layers
Publication Date: 2015.03.17 JPMORGAN CHASE BANK NA
  • US8982362B2 patent drawing
  • US8982362B2 patent drawing
  • US8982362B2 patent drawing

AI summary

Described herein is a method and apparatus for measuring the thickness of a deposited semiconductor material. A colorimeter has an optical source that illuminates a portion of a deposited semiconductor material with optical radiation, a sensor that collects and measures color information related to reflected radiation from the deposited semiconductor material, and a processor that receives the color information related to the reflected radiation from the sensor and calculates a thickness of the semiconductor material. The processor may control a semiconductor material deposition apparatus.