Colossal Magnetocapacitive Transistor Gate for Non-Volatile Memory
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Solution Overview
Problem
Conventional semiconductor memory devices, particularly volatile memory cells, lose data when power is interrupted due to the dissipation of applied voltage, necessitating the development of non-volatile memory solutions that can maintain data storage without continuous power supply.
Innovation Solution
Integration of colossal magnetocapacitive materials in transistor gate structures to generate an electrical field, utilizing the colossal magnetocapacitance phenomenon to store charge and maintain data storage even without applied power, thereby enabling non-volatile memory cells.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional volatile memory cells use applied voltage to store data, then data storage is achieved, but data is lost when power is interrupted
Solution Approach 1:
The patent changes the physical parameter of charge storage from transient electrical charge (volatile) to trapped charge states in quantum dots (non-volatile). By modifying the energy state and confinement mechanism of charge carriers, the system achieves data retention without continuous power supply.
Solution Approach 2:
Quantum dots serve as intermediary structures between the charge storage node and the rest of the memory cell. These nanoscale semiconductor particles act as charge traps that can hold electrical charge indefinitely, mediating between the need for simple voltage storage and the requirement for non-volatile retention.
2Reliability
If quantum dots are formed close to the channel region, then non-volatile memory functionality is achieved, but fabrication complexity increases
Solution Approach 1:
The patent merges the charge storage function with the quantum dot formation process by integrating quantum dot synthesis directly into the memory cell fabrication sequence. This combining of functions reduces overall device complexity despite introducing nanoscale material processing.
Solution Approach 2:
The quantum dots are formed through self-assembly or epitaxial growth processes that automatically create the desired nanoscale structures without requiring additional lithography or patterning steps. This self-organizing behavior simplifies fabrication by eliminating complex manual positioning operations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of colossal magnetocapacitive materials in semiconductor devices allows for the creation of non-volatile memory cells that retain data without continuous power, enhancing data storage capabilities and improving memory device reliability.
Implementation Method 1
configuring the colossal magnetocapacitive material to exhibit colossal magnetocapacitance to generate an electrical field in the channel region
Data Source
AI summary
Semiconductor devices include a transistor having a gate structure located close to a channel region that comprises a colossal magnetocapacitive material. The gate structure is configured to affect electrical current flow through the channel region between a source and a drain. The colossal magnetocapacitive material optionally may be disposed between two structures, one or both of which may be electrically conductive, magnetic, or both electrically conductive and magnetic. Methods of fabricating semiconductor devices include forming a colossal magnetocapacitive material close to a channel region between a source and a drain of a transistor, and configuring the colossal magnetocapacitive material to exhibit colossal magnetocapacitance for generating an electrical field in the channel region. Methods of affecting current flow through a transistor include causing a colossal magnetocapacitive material to exhibit colossal magnetocapacitance and generate an electrical field in a channel region of a transistor.