Columnar Memory Structure to Suppress Floating Body Effects
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Solution Overview
Problem
Conventional semiconductor memory devices suffer from the floating body effect, leading to kink effects, parasitic bipolar transistor effects, abnormal subthreshold slope, device threshold voltage drift, reduced drain breakdown voltage, and increased power consumption due to unstable operation and larger leakage currents.
Innovation Solution
A semiconductor structure is designed with a columnar epitaxial structure, a grounding structure, a bit line structure, and a columnar capacitor structure, where the grounding structure wraps one end of the columnar epitaxial structure to facilitate charge flow away, reducing the floating body effect and improving performance by ensuring good electrical isolation and reduced parasitic capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional transistor structures are used in semiconductor memory devices, then manufacturing processes are simpler, but floating body effects cause kink effects, parasitic bipolar transistor effects, abnormal subthreshold slopes, threshold voltage drift, reduced drain breakdown voltage, and increased leakage current
Solution Approach 1:
The transistor body is segmented into multiple regions with different doping types and concentrations. The body region includes a first doping type region and a second doping type region, creating distinct functional zones that prevent floating body effects while maintaining manufacturing feasibility through standardized processing steps
Solution Approach 2:
Different regions of the transistor body are assigned different doping characteristics. The first doping type region has a first doping concentration while the second doping type region has a second doping concentration, allowing local optimization of electrical properties to eliminate parasitic effects without complicating the overall device structure
2Loss of energy
If conventional transistor structures are used, then device structure is simpler, but parasitic capacitance increases leading to larger leakage current and higher power consumption
Solution Approach 1:
The transistor body is divided into doped regions that reduce parasitic capacitance between different parts of the device. This segmentation creates electrical isolation that reduces leakage current and power consumption while maintaining a structure that can be manufactured using conventional semiconductor processing techniques
Solution Approach 2:
The doping concentration is optimized in different regions of the transistor body. By adjusting the doping concentration parameters in the first and second doping type regions, the parasitic capacitance is reduced and leakage current is minimized, achieving lower power consumption without requiring fundamentally new device architectures
Data Source
AI summary
The present disclosure relates to a semiconductor structure, including a columnar epitaxial structure, a grounding structure, a bit line structure, a columnar capacitor structure, and a word line structure. The columnar epitaxial structure extends in a first direction; the grounding structure wraps one end of the columnar epitaxial structure; the bit line structure wraps the other end of the columnar epitaxial structure; the columnar capacitor structure surrounds the columnar epitaxial structure, and is located between the grounding structure and the bit line structure; and the word line structure surrounds the columnar epitaxial structure, and is located between the bit line structure and the columnar capacitor structure.