Columnar Semiconductor Assembly With Gradient Band Gap

The patent implements a non-uniform band gap structure where the band gap energy varies spatially across the semiconductor layer. Specifically, the active zone is designed with a band gap that decreases in the direction from the substrate toward the free end of the columnar structure. This local variation in band gap properties creates favorable conditions for charge carrier diffusion and radiative recombination at specific locations, thereby improving emission efficiency without requiring complex external components.

The patent employs parameter changes by varying the band gap energy across different regions of the semiconductor layer. The band gap is engineered to decrease from the substrate side toward the free end, creating a gradient that enhances charge carrier diffusion toward the free end region. This parameter variation is achieved through controlled composition changes in the semiconductor material, allowing efficient radiation generation at the free end while maintaining manufacturing feasibility through established semiconductor fabrication techniques.

The patent extracts and eliminates the need for external mirror components by integrating the radiation amplification function directly into the semiconductor layer structure. The non-uniform band gap design inherently creates conditions for enhanced radiative recombination and light amplification at the free end, replacing what would traditionally require separate optical components like mirrors. This integration simplifies the overall device structure while maintaining high radiance output.