Comb-Shaped TFT Structure for GOA Leakage Isolation
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Solution Overview
Problem
In gate-driver-on-array (GOA) circuits, defects in the gate insulating layer can lead to leakage paths, disabling the function of thin film transistors and the entire GOA circuit.
Innovation Solution
A thin film transistor structure with a comb-shaped source and drain configuration, where each active pattern is provided with both a source and a drain comb tooth portion, allowing for parallel operation of multiple transistors, ensuring that a defect in one transistor does not affect others.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If a large channel width TFT is used in GOA circuit, then the output current is improved, but the risk of gate insulating layer defects causing leakage paths increases
Solution Approach 1:
The source and drain electrodes are divided into multiple comb tooth portions instead of single continuous electrodes. Each comb tooth portion corresponds to a specific active pattern, creating segmented current paths. This segmentation isolates potential leakage paths to individual tooth portions, preventing a single defect from disabling the entire TFT while maintaining large effective channel width for high output current.
2Productivity
If the channel width is increased to 500-10000 microns for GOA circuit, then the driving capability is improved, but the impact of a single defect on the whole circuit increases
Solution Approach 1:
The large channel width is maintained by increasing the number of comb tooth portions rather than using a single wide electrode. Each tooth portion acts as an independent current path segment. When a defect occurs in one segment, only that local segment is affected while other segments continue to function, thereby maintaining overall driving capability despite the large total channel width.
Solution Approach 2:
Different regions of the source and drain electrodes (individual comb tooth portions) have localized functions corresponding to specific active patterns. This local quality approach ensures that defects are contained to local regions rather than affecting the entire large-channel-width structure, allowing the rest of the circuit to maintain its driving capability.
Data Source
AI summary
A thin film transistor structure, a gate driver on array (GOA) circuit and a display device are provided. The thin film transistor structure defines a plurality of thin film transistors by patterning an active layer. Therefore, when a defect appears in the gate insulating layer of one of the plurality of thin film transistors and a leakage path is formed, other thin film transistors will not be affected. Therefore, a problem of functional failure of a whole thin film transistor structure can be avoided.