Combo Semiconductor Memory Voltage Generator for Power Reduction
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Solution Overview
Problem
Semiconductor memory apparatuses consume excessive current and power due to charge pumping, even when supplied with a 3.3V external voltage, which is inefficient and costly.
Innovation Solution
A combo semiconductor memory apparatus that includes a signal generator to determine the level of an external voltage and a voltage generator to either pump up the voltage or supply it directly, optimizing the high-level voltage output based on the external voltage level, thereby reducing current and power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If charge pumping is performed on a 3.3V external voltage to generate high-level voltage VPP, then the high-level voltage can be generated, but current and power consumption increase excessively
Solution Approach 1:
The patent applies dynamics by making the voltage generation mode adjustable based on external voltage level. The system dynamically switches between direct output mode (for 3.3V external voltage) and charge pumping mode (for 1.8V external voltage), optimizing performance for each condition rather than using a fixed approach
Solution Approach 2:
The patent changes the operating parameter (voltage level) detection and responds accordingly. By detecting whether the external voltage is 1.8V or 3.3V, the system changes its internal behavior - directly outputting 3.3V when appropriate, or performing charge pumping only when necessary to generate VPP from 1.8V
2Reliability
If charge pumping is performed regardless of external voltage level, then high-level voltage VPP can be generated for all cases, but unnecessary current and power consumption occurs when external voltage is already 3.3V
Solution Approach 1:
The patent implements feedback by detecting the external voltage level (1.8V or 3.3V) and using this information to control whether charge pumping should be performed. This feedback mechanism prevents unnecessary energy consumption by only activating charge pumping when the external voltage is 1.8V, while directly outputting 3.3V when the external voltage is already at the required level
3Adaptability or versatility
If a combo DRAM is designed to support both 1.8V and 3.3V external voltages, then versatility is improved, but device complexity increases due to need for voltage detection and mode switching
Solution Approach 1:
The patent achieves universality by designing a single DRAM device that can operate with both 1.8V and 3.3V external voltages. The same basic DRAM structure supports multiple voltage standards through the voltage-level-dependent output mechanism, eliminating the need for separate devices for different voltage requirements
Solution Approach 2:
The patent uses dynamics to manage complexity by implementing a flexible voltage generation system that adapts its behavior based on input voltage. The charge pumping circuit is selectively activated or bypassed based on whether the external voltage is 1.8V or 3.3V, allowing one device structure to handle multiple voltage requirements without requiring complex separate circuits for each mode
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces current and power consumption by selectively adjusting the voltage output, improving operational efficiency and enabling the use of various external voltage types, thus lowering development costs and enhancing memory performance.
Implementation Method 1
the semiconductor memory apparatus performs charge pumping on the external voltage VDD of 1.8 V to generate a high-level voltage VPP
Data Source
AI summary
A combo semiconductor memory apparatus capable of reducing current and power consumption is provided. The semiconductor memory apparatus includes: a signal generator that generates a voltage control signal according to the level of an external voltage; and a voltage generator that pumps up the level of the external voltage in response to the voltage control signal and outputs the pumped voltage to a high-level voltage output terminal, or supplies the external voltage as a high-level voltage.