Common Source Nonvolatile Memory Device Integration
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Solution Overview
Problem
The increasing integration and complexity of nonvolatile memory devices lead to manufacturing challenges, such as reduced margins and new defects, which deteriorate their characteristics, making it difficult to maintain high performance and reliability.
Innovation Solution
A nonvolatile memory device design featuring a device isolation pattern with parallel first active regions and a perpendicular second active region, where a common source and drains are formed, along with selection lines and a source conductive line, to facilitate stable voltage application and improve integration and performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If nonvolatile memory devices are highly integrated, then storage capacity and productivity are improved, but manufacturing precision and reliability deteriorate due to reduced margins and new defects
Solution Approach 1:
The active region is divided into multiple first active regions extending in a first direction and a second active region extending in a perpendicular second direction. This segmentation allows for organized placement of memory cells and reduces manufacturing complexity by creating distinct functional zones within the integrated structure.
Solution Approach 2:
Multiple drain regions are merged into a single common drain formed in the second active region, and multiple source regions are merged into a single common source. This merging reduces the number of individual components, simplifies the manufacturing process, and improves reliability by reducing interface defects while maintaining high integration.
2Productivity
If nonvolatile memory devices are highly integrated, then storage capacity is improved, but device complexity increases making manufacturing more difficult
Solution Approach 1:
The common source and common drain structures serve multiple functions: they act as shared electrical contacts for multiple memory cells, provide structural support, and define the boundaries of the active regions. This multi-functionality reduces the overall device complexity while enabling high integration.
Solution Approach 2:
The active regions are arranged in perpendicular directions (first direction and second direction), creating a two-dimensional layout that efficiently packs memory cells. The common source and drain extend along the second direction, adding a dimensional organization that simplifies the manufacturing process while achieving high integration.
3Productivity
If common source and drains are formed in perpendicular active regions, then integration is improved, but interface defects may occur at the crossing regions
Solution Approach 1:
The second active region is specifically designed to extend in the second direction and cross the first active regions, creating a localized area for the common source and drain formation. This local quality approach concentrates the perpendicular intersection in a controlled region, allowing for optimized manufacturing processes that minimize interface defects at the crossing points.
Data Source
AI summary
Provided is a nonvolatile memory device including a common source. The device includes a first active region crossing a second active region, a common source disposed in the second active region, and a source conductive line disposed on the common source in parallel to the common source. The source conductive line is electrically connected to the common source.