3D Nonvolatile Memory Common Source Line Voltage Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The existing methods for programming flash memory devices result in increased power consumption due to the need to charge and discharge the common source line to the same voltage level in every program loop, which reduces boosting efficiency.
Innovation Solution
A method is introduced that involves applying a programming voltage to a selected word line, electrically floating the common source line, and applying verify and reference voltages to determine program passage, with varying voltage levels applied to the common source line across different programming loops to reduce unnecessary power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If the voltage level of the common source line is increased to a specific level in every program loop to increase boosting efficiency, then the boosting efficiency is improved, but the power consumption increases due to charging and discharging the common source line to the same level at every program loop
Solution Approach 1:
The patent applies dynamics by making the common source line voltage level adjustable and variable across different program loops rather than fixed. The voltage level is dynamically changed based on the programming status and requirements, allowing the system to adapt the voltage level to minimize power consumption while maintaining boosting efficiency when necessary.
Solution Approach 2:
The patent changes the voltage level parameter of the common source line across different program loops. Instead of maintaining a constant high voltage level, the voltage level is modified based on programming progress and requirements, reducing unnecessary charging and discharging operations that consume power.
2Productivity
If the voltage level of the common source line is maintained at a high level to improve boosting efficiency, then the programming speed is improved, but the power consumption increases
Solution Approach 1:
The patent implements periodic action by applying high voltage to the common source line only during specific program loops where it is most beneficial for programming speed, rather than continuously. The voltage level is periodically adjusted based on programming progress, maintaining high speed performance when needed while reducing power consumption during later stages.
Solution Approach 2:
The system dynamically adjusts the common source line voltage level based on programming status, transitioning from high voltage in early loops to lower voltage in later loops. This dynamic adjustment maintains programming speed during critical phases while reducing power consumption overall.
Data Source
AI summary
In a method of programming a three-dimensional nonvolatile memory device, a program loop is executed at least one time. The program loop includes a programming step for programming selected memory cells among memory cells and a verifying step for verifying whether the selected memory cells are program-passed or not. In programming the selected memory cells, a level of a voltage being applied to a common source line connected to the memory cells in common may be changed. Thus, in a program operation, power consumption which is needed to charge-discharge the common source line can be decreased while increasing boosting efficiency.