Compact Bias Generator Level Shifter for Faster Voltage Translation
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Solution Overview
Problem
Conventional level shifters in wireless communications devices face challenges such as increased complexity, signal propagation delay, and form factor issues due to protection devices, which limit operational speed and reliability, especially when transitioning between voltage levels.
Innovation Solution
A level shifter with a compact bias generator that decouples speed and reliability by independently generating and using first and second bias signals, reducing the need for additional protection devices and allowing for faster voltage transitions without increasing the circuit area.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If protection devices are added to ensure reliability, then reliability is improved, but device complexity and form factor increase
Solution Approach 1:
A buffer circuit is introduced as an intermediary between the high-voltage node and the gate oxide to protect the gate oxide from voltage spikes without requiring complex protection devices. The buffer absorbs the voltage stress and transfers only the necessary control signal to the switch transistor, thereby improving reliability while maintaining circuit simplicity.
Solution Approach 2:
The gate oxide itself is used to control the high-voltage switch transistor through the buffer circuit. The gate oxide's voltage controls the buffer, which in turn controls the high-voltage switch, allowing the gate oxide to indirectly handle high-voltage switching without direct exposure. This self-service mechanism improves reliability while avoiding additional complex protection circuitry.
2Reliability
If protection devices are added to ensure reliability, then reliability is improved, but signal propagation delay increases
Solution Approach 1:
The buffer circuit serves as a fast intermediary that protects the gate oxide from voltage spikes while introducing minimal propagation delay. The buffer is designed to respond quickly to voltage changes, providing protection without significantly slowing down the signal transmission from the gate oxide to the high-voltage switch transistor.
3Reliability
If buffer circuit is added to protect gate oxide, then reliability is improved, but form factor increases
Solution Approach 1:
A compact buffer circuit is designed as an intermediary element that provides necessary protection to the gate oxide while occupying minimal circuit area. The buffer is implemented using efficient circuit topology that achieves protection functionality with reduced transistor count and smaller layout footprint compared to traditional protection devices.
Data Source
AI summary
A level shifter includes a compact bias generator. The compact bias generator generates a first bias signal and a second bias signal, in the absence of a buffer. The level shifter also includes a first latch in a first stage to translate a first voltage to a second voltage based on the first bias signal. The level shifter further includes a second latch in a second stage to translate the first voltage to a third voltage based on the second bias signal. The first bias signal is independent of the second bias signal.