Semiconductor Protection Structure for Compact On-Chip ESD Isolation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor devices face challenges in miniaturization and increased susceptibility to ElectroStatic Discharge (ESD) damage, particularly in power conversion applications and automotive chips, where level shifters require large semiconductor areas and sensitive components are vulnerable to ESD during production and operation.
Innovation Solution
A semiconductor device design featuring isolation structures and protection areas with trench isolation structures electrically separating active areas, incorporating protection elements connected in series and laterally surrounded by device isolation structures, allowing for compact layout and effective ESD protection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stress or pressure
If level shifters are arranged parallel to voltage drop to support potential difference between active areas, then the device can operate at larger voltage differences, but the required semiconductor area increases
Solution Approach 1:
The patent changes the arrangement dimension of level shifters from parallel to voltage drop (horizontal arrangement) to perpendicular to voltage drop (vertical stacking). Multiple level shifter stages are stacked in the vertical dimension, allowing the device to support larger voltage differences while occupying minimal horizontal semiconductor area. This dimensional transition resolves the contradiction between voltage capability and area consumption.
2Productivity
If device miniaturization is pursued to improve operating speeds, then productivity and speed increase, but susceptibility to ESD damage increases
Solution Approach 1:
The patent integrates ESD protection structures directly within the active areas, nesting protection elements inside the same semiconductor region as the functional circuits. This nested arrangement provides ESD protection without requiring additional external protection devices or increasing overall device footprint, thus maintaining miniaturization benefits while reducing ESD susceptibility.
Solution Approach 2:
The patent introduces intermediate ESD protection structures (such as protection elements and isolation structures) between external interfaces and internal sensitive circuits. These intermediary structures act as mediators that intercept and dissipate ESD energy before it reaches sensitive components, protecting the miniaturized high-speed circuits from damage.
3Reliability
If protection structures are added to protect against ESD damage, then reliability improves, but device complexity increases
Solution Approach 1:
The patent merges ESD protection functions with existing device structures by integrating protection elements within active areas and combining multiple functions into unified structures. This merging approach provides comprehensive ESD protection while avoiding the need for separate, additional protection components, thus maintaining relatively simple device architecture.
Solution Approach 2:
The patent designs protection structures that serve multiple functions simultaneously - providing ESD protection, electrical isolation, and structural support. This multi-functionality reduces the need for dedicated single-purpose protection components, thereby maintaining device simplicity while achieving reliable ESD protection.
Data Source
Figure 1A~3
Figure 4~6
Figure 7~8
AI summary
An embodiment of a semiconductor device (100) comprises an isolation structure (104). A first active area (108), a protection area (112), and a second active area (116) are formed on the isolation structure (104). A first trench isolation structure (110) electrically separates the first active area (108) and the protection area (112). A second trench isolation structure (114) electrically separates the protection area (112) and the second active area (116). A protection structure (118) is formed in the protection area (112). A first pin (120) of the protection structure (118) is electrically connected to the first active area (108) and a second pin (122) of the protection structure (118) is electrically connected to the second active area (116).