Compact NTC Sensor Element for MEMS Integration
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Solution Overview
Problem
Current temperature sensing technologies, such as ceramic thermistors and silicon temperature sensors, are not suitable for integration into MEMS or SESUB structures due to their large size and incompatible contacting methods.
Innovation Solution
A compact temperature sensor element is developed, comprising a carrier with an insulating layer, a thin functional layer with NTC ceramic material, and electrodes formed on the carrier. The sensor element is designed for direct integration into MEMS or SESUB structures, with a maximum edge length of 500 μm and a thickness of less than 50 μm.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If conventional temperature sensors (ceramic thermistors, silicon temperature sensors) are used, then temperature measurement function is achieved, but the sensor size is too large for MEMS or SESUB structures
Solution Approach 1:
The sensor element is segmented into distinct functional layers (carrier layer, insulating layer, functional layer, electrode layer, contact layer) that can be independently optimized and processed. This segmentation allows each layer to be designed for its specific function while collectively achieving the required miniaturization for MEMS integration.
Solution Approach 2:
The patent transitions from conventional three-dimensional bulk sensors to a planar thin-film structure with dimensions optimized for surface integration. The sensor element achieves a maximum edge length of 500 μm and thickness of less than 50 μm by utilizing thin-film deposition techniques that build functionality in the vertical dimension while maintaining a compact footprint.
2Ease of manufacture
If conventional contacting methods (soldering, wire bonding) are used, then electrical connection is achieved, but the contacting method is incompatible with MEMS or SESUB structures
Solution Approach 1:
The contacting functionality is merged directly into the sensor element structure through integrated electrode and contact layers that are deposited as part of the same thin-film fabrication process. This eliminates the need for separate soldering or wire bonding steps, making the device compatible with MEMS and SESUB integration processes.
Solution Approach 2:
An insulating layer is introduced as an intermediary between the carrier and functional layers, enabling direct integration into MEMS structures while providing electrical isolation where needed. This intermediary layer facilitates compatibility with semiconductor fabrication processes without requiring conventional mechanical contacting methods.
3Manufacturing precision
If the sensor element is miniaturized for MEMS integration, then integration compatibility is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent controls the thickness and composition parameters of each layer precisely through thin-film deposition processes. The carrier layer has a maximum edge length of 500 μm, the insulating layer provides electrical isolation with controlled thickness, and the functional layer contains NTC ceramic material with specific compositional parameters that determine the temperature sensing characteristics. These parameter controls enable miniaturization while maintaining manufacturing precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The compact sensor element enables efficient integration into MEMS or SESUB structures, providing accurate temperature measurement while meeting the size and contacting requirements of these systems.
Implementation Method 1
The functional layer has a material (functional material) with a temperature-dependent electrical resistance. Preferably, the functional layer comprises an NTC ceramic.
Data Source
AI summary
In an embodiment a sensor element includes at least one carrier having a top side and a bottom side, the top side being electrically insulating, at least one functional layer including a material with a temperature-dependent electrical resistance, the functional layer being arranged on the carrier, at least two electrodes arranged on the carrier at a distance from one another and at least two contact pads configured for electrically contacting the sensor element, wherein a respective contact pad is arranged directly on a partial region of one of the electrodes, wherein the sensor element is configured to measure a temperature, and wherein the sensor element is configured for direct integration into an electrical system as a discrete component.