Compact Silicon Dioxide Layer Fabrication
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Solution Overview
Problem
Existing silicon dioxide layers in semiconductor structures are often loose, allowing unwanted particles to diffuse into the semiconductor substrate, leading to electric drift in transistors.
Innovation Solution
A method involving cleaning a semiconductor substrate with hydrogen peroxide or ozone water to form a chemical oxide layer, which is then heated in a no-oxygen atmosphere to create a compact layer, followed by oxidation in an oxygen atmosphere to form a dense silicon dioxide layer with an optimal oxygen-to-silicon ratio, preventing particle diffusion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional silicon dioxide layer is formed, then the insulation structure is provided, but the layer structure is loose allowing particles to diffuse into the substrate
Solution Approach 1:
The silicon dioxide layer is divided into two distinct sub-layers: a lower compact layer with high density formed by heating in nitrogen atmosphere, and an upper silicon dioxide layer formed by oxidation. This segmentation allows each sub-layer to serve different functions - the compact layer blocks particle diffusion while the upper layer provides insulation.
Solution Approach 2:
The compact layer is formed in advance before the main silicon dioxide layer. By first creating the dense compact layer through heating in nitrogen atmosphere, the structure is prepared to prevent particle diffusion before the oxidation step forms the upper silicon dioxide layer.
2Reliability
If the silicon dioxide layer is made compact to prevent particle diffusion, then particle blocking is improved, but the formation process becomes more complex
Solution Approach 1:
The formation of the compact layer and the silicon dioxide layer are merged into a continuous fabrication process. The compact layer is formed by heating in nitrogen atmosphere, then immediately oxidized in oxygen atmosphere to form the silicon dioxide layer on top, eliminating the need for separate processing steps.
Solution Approach 2:
The compact layer is formed by heating the substrate in a nitrogen atmosphere, which prevents oxidation during the heating process and creates the desired compact structure. This inert atmosphere control is key to achieving the compact layer without adding complex equipment.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resulting compact silicon dioxide layer effectively blocks particle diffusion, enhancing electron mobility and current performance in semiconductor elements by 14% and 5.3% respectively compared to conventional loose structures.
Implementation Method 1
The semiconductor substrate is cleaned with a solution containing hydrogen peroxide to form a chemical oxide layer on the semiconductor substrate
Implementation Method 2
The chemical oxide layer is heated in no oxygen atmosphere, such that the chemical oxide layer forms a compact layer
Implementation Method 3
The semiconductor substrate is heated in oxygen atmosphere to form a silicon dioxide layer between the semiconductor substrate and the compact layer
Data Source
AI summary
A method for fabricating silicon dioxide layer is disclosed. The method includes the following steps. Firstly, a semiconductor substrate is provided. Next, the semiconductor substrate is cleaned with a solution containing hydrogen peroxide to form a chemical oxide layer on the semiconductor substrate. Then, the chemical oxide layer is heated in no oxygen atmosphere, such that the chemical oxide layer forms a compact layer. Then, the semiconductor substrate is heated in oxygen atmosphere to form a silicon dioxide layer between the semiconductor substrate and the compact layer.