Complementary Doped Semiconductor Regions via Sequential Trench Deposition
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Solution Overview
Problem
Current methods for forming complementary doped semiconductor regions in semiconductor bodies are inefficient, requiring multiple steps and materials like BSG, PSG, and ASG for doping, which can be cumbersome and less effective in achieving precise doping profiles.
Innovation Solution
A method involving the formation of first and second trenches in a semiconductor body, followed by the deposition of dopant-containing layers within these trenches, where the first layer includes dopants of a first doping type and the second layer includes dopants of a complementary type, allowing for controlled diffusion to create complementary doped regions through a temperature process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If traditional methods using separate trenches and filling materials (BSG, PSG, ASG) are used to form complementary doped regions, then doping can be achieved, but the process becomes cumbersome and inefficient
Solution Approach 1:
The patent combines the formation of both n-type and p-type doped regions into a single integrated process. Material layers containing both phosphorous (n-type) and boron (p-type) dopants are deposited sequentially in the same trench structure, eliminating the need for separate processing steps for each doping type. This merging of operations directly improves productivity while reducing process complexity.
Solution Approach 2:
The patent applies preliminary doping by incorporating dopants into the material layers before the final diffusion step. The phosphorous and boron dopants are pre-loaded into the respective material layers (310, 320) during deposition, allowing controlled diffusion to occur later in a single thermal processing step. This preliminary preparation streamlines the overall process by consolidating multiple doping operations into one.
2Manufacturing precision
If multiple separate doping steps are performed to achieve precise doping profiles, then doping precision can be maintained, but the process time and complexity increase
Solution Approach 1:
The patent performs preliminary doping by incorporating dopants into material layers before the final diffusion step. The phosphorous and boron dopants are pre-loaded into layers 310 and 320 during deposition with controlled concentrations and distributions. This preliminary preparation allows precise doping profiles to be achieved in a single diffusion step, reducing total process time while maintaining manufacturing precision.
Solution Approach 2:
The patent controls doping precision by adjusting parameters during material layer deposition, including dopant concentration, layer thickness, and deposition rate. These parameters are optimized to achieve the desired doping profiles in the final diffused regions. By controlling parameters during the preliminary layer formation, precise doping is achieved without requiring multiple iterative doping steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the efficient formation of complementary doped semiconductor regions with precise control over doping profiles, improving the efficiency and accuracy of semiconductor region creation, which is crucial for advanced semiconductor devices.
Implementation Method 1
diffusing dopants from the filling material into the semiconductor body
Data Source
AI summary
A method includes: forming first and second trenches in a semiconductor body; forming a first material layer on the semiconductor body in the first and second trenches such that a first residual trench remains in the first trench and a second residual trench remains in the second trench; removing the first material from the second trench; and forming a second material layer on the first material layer in the first residual trench and on the semiconductor body in the second trench. The first material layer includes dopants of a first doping type and the second material layer includes dopants of a second doping type. The method further includes diffusing dopants from the first material layer in the first trench into the semiconductor body to form a first doped region, and from the second material layer in the second trench into the semiconductor body to form a second doped region.