Complementary Mask Patterning for Lower-Cost Semiconductor Contacts
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Solution Overview
Problem
The high manufacturing cost of semiconductor structures is attributed to the need for multiple photomasks with different mask patterns, each requiring distinct preparation processes, leading to increased costs due to the use of various photomasks.
Innovation Solution
A manufacturing method where a first mask layer with a first mask pattern is used to form active regions, and a second mask layer with a complementary second mask pattern is used to form contact structures, allowing the same photomask to prepare both, thereby reducing the number of photomasks needed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multiple photomasks with different mask patterns are used for different manufacturing steps, then the semiconductor structure can be manufactured with required functionality, but the manufacturing cost increases significantly
Solution Approach 1:
The patent applies universality by designing a single photomask that can serve multiple functions across different manufacturing steps. The photomask includes both a first mask pattern for forming active regions and a second mask pattern for forming contact structures, allowing one photomask to replace what would traditionally require multiple separate photomasks. This multi-functionality directly reduces manufacturing cost while maintaining the ability to meet various functional requirements.
Solution Approach 2:
The patent merges the first mask pattern and second mask pattern into a single photomask structure. By combining these patterns that would traditionally be on separate photomasks into one unified photomask, the invention eliminates the need for multiple photomask preparations and reduces overall manufacturing complexity and cost, while still enabling both active region formation and contact structure formation.
2Manufacturing precision
If multiple photomasks are prepared for different mask layers, then different pattern requirements can be met, but the preparation cost and complexity increase
Solution Approach 1:
The photomask is designed with multi-functionality to serve multiple patterning needs. It includes a first mask pattern with first light-shielding regions for active region formation and a second mask pattern with second light-shielding regions for contact structure formation. This universal design maintains pattern accuracy for both functions while eliminating the complexity of preparing and managing multiple separate photomasks.
Solution Approach 2:
The invention merges multiple mask patterns into a single photomask structure. The first mask pattern and second mask pattern are integrated on the same photomask substrate, allowing both patterns to be prepared and aligned in one process. This merging reduces the device complexity associated with handling multiple photomasks while preserving the manufacturing precision required for both active regions and contact structures.
3Manufacturing precision
If different photomasks are used for active regions and contact structures, then specific pattern requirements are satisfied, but the number of preparation processes increases
Solution Approach 1:
The photomask achieves universality by incorporating both the first mask pattern for active regions and the second mask pattern for contact structures. This allows a single photomask to satisfy specific pattern requirements for both manufacturing steps, maintaining pattern consistency while reducing the number of preparation processes from multiple to one, thereby improving manufacturing efficiency.
Data Source
AI summary
Provided is a manufacturing method of a semiconductor structure, including: providing a substrate; forming a first mask layer having a first mask pattern on the substrate, and etching the substrate by using the first mask layer as a mask to form active regions; forming several discrete bitlines on the active regions; forming a sacrificial layer between adjacent bitlines; forming a second mask layer having a second mask pattern on the sacrificial layer, the first mask pattern and the second mask pattern being complementary to each other; and etching the sacrificial layer by using the second mask layer and the bitlines as masks to form a plurality of contact structures. The embodiment of the present disclosure is beneficial to reducing the manufacturing cost of the semiconductor structure.