Complementary Strained FinFET Structure
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Solution Overview
Problem
In FinFET structures, the small volume available for strain engineering and the detrimental effect of compressive strain on n-channel FinFETs limit the application of strain engineering, as materials beneficial for p-channel FinFETs reduce electron mobility in n-channel FinFETs.
Innovation Solution
A complementary FinFET device is fabricated using a p-type fin with a compressively-strained material and an n-type fin with a tensile-strained material, both lattice mismatched relative to the semiconductor substrate, allowing independent tuning of strain for each polarity to enhance carrier mobility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If strain engineering is applied in FinFET structures, then carrier mobility is improved, but the small volume of fin limits the amount of strain material that can be integrated
Solution Approach 1:
The patent changes the strain parameter by using both compressively strained and tensilely strained semiconductor materials in the fin structure. This allows the finite volume of the FinFET to be utilized more effectively by implementing opposite strain directions in different regions, thereby achieving improved carrier mobility for both p-channel and n-channel devices within the constrained fin volume.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach increases carrier mobility in both p-channel and n-channel transistors by integrating complementary strains, enabling improved performance and independent design of each device type.
Implementation Method 1
a p-type device having a p-channel fin comprising a first material that is lattice mismatched relative to a semiconductor substrate, the first material having a compressive strain
Implementation Method 2
an n-type device having an n-channel fin comprising a second material having a tensile strain and being lattice mismatched relative to the semiconductor substrate
Data Source
AI summary
A complementary fin field-effect transistor (FinFET) includes a p-type device having a p-channel fin. The p-channel fin may include a first material that is lattice mismatched relative to a semiconductor substrate. The first material may have a compressive strain. The FinFET device also includes an n-type device having an re-channel fin. The n-channel fin may include a second material having a tensile strain that is lattice mismatched relative to the semiconductor substrate. The p-type device and the n-type device cooperate to form the complementary FinFET device.