Complementary Oxide and Poly-Silicon TFT Array Substrate for OLED Manufacturing
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Solution Overview
Problem
The manufacturing process of OLED display devices with drive circuits based on complementary metal-oxide-semiconductor (CMOS) technology is complex and costly due to the requirement of multiple pattern processes and doping steps, which restricts the development of lighter and thinner OLED displays.
Innovation Solution
The use of an array substrate with complementary thin film transistors, where a first oxide thin film transistor and a second poly-silicon thin film transistor are integrated with reduced pattern processes, simplifying the manufacturing by eliminating the need for multiple crystallization and doping steps, and allowing direct formation of the oxide thin film transistor without doping or crystallization.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If complementary metal-oxide-semiconductor (CMOS) technology is used for drive circuits, then display performance is improved, but manufacturing complexity and cost increase due to multiple pattern processes and doping steps
Solution Approach 1:
The invention divides the drive circuit into two separate transistor types: oxide thin film transistors (ox-TFTs) and poly-silicon thin film transistors (poly-TFTs). Each transistor type is optimized for specific functions - ox-TFTs for switching operations and poly-TFTs for drive operations. This segmentation allows each transistor type to be manufactured with simpler, more specialized processes rather than requiring the full complexity of CMOS technology, thereby reducing overall manufacturing complexity while maintaining display performance.
2Manufacturing precision
If multiple pattern processes and doping steps are required, then transistor performance is improved, but production cost and process complexity increase
Solution Approach 1:
The invention changes the material parameters and structural configuration of the transistors. By using oxide semiconductor materials for switching TFTs and poly-silicon for drive TFTs, the patent achieves good transistor performance with fewer doping steps and simplified pattern processes. The parameter changes in material composition and device structure enable manufacturing with reduced process complexity and lower production costs while maintaining necessary transistor performance.
3Reliability
If multiple crystallization and doping steps are performed, then device functionality is improved, but manufacturing time and process complexity increase
Solution Approach 1:
The invention performs preliminary actions by pre-forming the oxide semiconductor layer and poly-silicon layer with appropriate properties before final transistor fabrication. The oxide semiconductor active layer is prepared in advance with characteristics suitable for switching TFTs, and the poly-silicon layer is prepared for drive TFTs. This preliminary preparation reduces the need for subsequent crystallization and doping steps, thereby shortening manufacturing time while ensuring device functionality.
Data Source
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AI summary
An array substrate and manufacturing method thereof and a display device are provided. The array substrate comprises a substrate (10) and a plurality of complementary thin film transistors provided on the substrate (10). The plurality of complementary thin film transistors comprise a first N-type thin film transistor (11) and a second P-type thin film transistor (12), and the first thin film transistor (11) is an oxide thin film transistor and the second thin film transistor (12) is a poly-silicon thin film transistor. The method of manufacturing the array substrate simplifies the manufacturing process and reduces production difficulty and cost.