Complex Oxide Coatings for Chlorine and Fluorine Plasma Erosion Resistance
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Solution Overview
Problem
Current semiconductor processing chamber coatings fail to effectively resist both fluorine and chlorine plasma erosion, leading to particle generation and wet cleaning issues, and lack sufficient dielectric strength, which compromises the purity and functionality of semiconductor devices.
Innovation Solution
The use of plasma-sprayed complex oxide coatings with ABO and ABCO compositions, where A, B, and C represent various metals, providing improved resistance to plasma erosion and wet corrosion, along with a bonding layer to enhance tensile bond strength, and maintaining low ppm levels of trace elements for reduced contamination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If Al2O3 coatings are used to resist chlorine plasma erosion, then erosion resistance is improved, but fluorine plasma causes rapid etching and particle generation
Solution Approach 1:
The patent applies composite oxide coatings combining multiple metal oxides (e.g., rare earth oxides like Y2O3, Gd2O3, Lu2O3 with other oxides) to achieve simultaneous resistance to both chlorine and fluorine plasma erosion. This composite approach allows the coating to provide chlorine plasma erosion resistance while preventing the rapid etching and particle generation caused by fluorine plasma that plagues single-component Al2O3 coatings.
Solution Approach 2:
The patent modifies the chemical composition parameters of the coating by incorporating rare earth oxides and adjusting the oxide ratios to optimize plasma resistance. By changing the compositional parameters of the coating material, the system achieves enhanced stability against both fluorine and chlorine plasma chemistries while minimizing particle generation.
2Reliability
If Y2O3 coatings are used to resist fluorine plasma erosion, then erosion resistance is improved, but chlorine plasma causes rapid etching and coating delamination occurs during wet cleaning
Solution Approach 1:
The patent combines Y2O3 with other metal oxides to create composite coatings that maintain fluorine plasma resistance while adding chlorine plasma stability and wet cleaning durability. The composite structure prevents the delamination and particle generation issues associated with pure Y2O3 coatings.
Solution Approach 2:
The patent creates coatings with differentiated functional layers or regions where rare earth oxides provide plasma resistance while other oxide components enhance chemical stability and adhesion. This local quality differentiation allows different parts of the coating to address specific challenges: fluorine resistance, chlorine stability, and wet cleaning durability.
3Ease of manufacture
If single oxide coatings are used, then manufacturing simplicity is maintained, but resistance to both fluorine and chlorine plasma cannot be achieved simultaneously
Solution Approach 1:
The patent employs composite oxide coatings that integrate multiple metal oxides into a single coating layer or multi-layer structure. This approach maintains manufacturing simplicity by using established thermal spray or CVD techniques while achieving the complex performance requirement of simultaneous fluorine and chlorine plasma resistance through the synergistic combination of oxide materials.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The complex oxide coatings significantly reduce plasma erosion rates and wet cleaning contamination, maintaining high purity and extending the life of chamber components while preventing particle generation and electrical malfunctions.
Implementation Method 1
plasma-sprayed complex oxide coatings
Implementation Method 2
improved resistance to plasma erosion
Implementation Method 3
a bonding layer to enhance tensile bond strength
Data Source
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AI summary
A semiconductor processing member is provided, including a body and a plasma spray coating provided on the body. The coating is an ABO or ABCO complex oxide solid solution composition, where A, B and C are selected from the group consisting of La, Zr, Ce, Gd, Y, Yb and Si, and O is an oxide. The coating imparts both chlorine and fluorine plasma erosion resistance, reduces particle generation during plasma etching, and prevents spalling of the coating during wet cleaning of the semiconductor processing member.