Compliant Bonding Structure for Semiconductor Device Mounting
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Solution Overview
Problem
Existing bonding methods for semiconductor light-emitting devices require aggressive conditions due to lack of compliance, potentially damaging the devices with high pressure and ultrasonic power to overcome topography variations between electrodes and submounts.
Innovation Solution
A compliant bonding structure of micro-bumps made from metals with a Young's modulus less than 150 GPa is used, which collapses and deforms during bonding to form a robust electrical, thermal, and mechanical connection, compensating for surface non-planarities without requiring high pressure or temperature.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional bonding methods are used without compliant structure, then bonding can be achieved, but high pressure and ultrasonic power are required which may damage the semiconductor device
Solution Approach 1:
The patent introduces a compliant bonding structure with specific mechanical properties (Young's modulus between 10-150 GPa, height 1-10 micrometers) that changes the bonding interface characteristics. This compliant layer reduces the harmful effects of high pressure and ultrasonic power by absorbing mechanical stress, thereby enabling reliable bonding without damaging the semiconductor device
Solution Approach 2:
The compliant bonding structure acts as an intermediary layer between the semiconductor device and the substrate. This intermediate layer compensates for surface non-planarities and reduces the transmission of harmful mechanical forces during bonding, protecting the device while maintaining bonding effectiveness
2Manufacturing precision
If high pressure is applied during bonding to overcome topography variations, then bonding contact is improved, but the semiconductor device may be damaged
Solution Approach 1:
The compliant bonding structure with controlled mechanical properties (Young's modulus 10-150 GPa, height 1-10 micrometers) modifies the pressure distribution at the bonding interface. It allows adequate bonding contact to be achieved with reduced peak pressures by distributing the load through the compliant material, preventing device damage while maintaining manufacturing precision
3Strength
If ultrasonic power is increased to achieve bonding, then interconnection is formed, but the semiconductor device may be damaged
Solution Approach 1:
The compliant bonding structure serves as a mechanical buffer that filters and reduces ultrasonic vibrations during the bonding process. By selecting materials with appropriate damping characteristics and mechanical properties, the structure allows sufficient interconnection strength to develop while protecting the semiconductor device from excessive ultrasonic energy
4Adaptability or versatility
If compliant bonding structure with low Young's modulus is used, then surface non-planarities are compensated, but the structure must be carefully controlled to maintain bonding effectiveness
Solution Approach 1:
The patent specifies precise parameter ranges for the compliant bonding structure (Young's modulus 10-150 GPa, height 1-10 micrometers) to achieve the right balance between compliance and structural integrity. These controlled parameters enable the structure to adapt to surface non-planarities while maintaining sufficient rigidity for effective bonding, managing complexity through defined specifications
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The compliant bonding structure reduces the risk of damage to semiconductor materials by accommodating slight variations in topography, enabling a robust and reliable connection with reduced bonding aggression, thus enhancing the reliability and durability of the semiconductor device mounting.
Implementation Method 1
the compliant bonding structure is plurality of metal bumps that undergo plastic deformation during bonding
Data Source
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AI summary
A compliant bonding structure is disposed between a semiconductor device and a mount (40). In some embodiments, the device is a light emitting device. When the semiconductor light emitting device is attached to the mount, for example by providing ultrasonic energy to the semiconductor light emitting device, the compliant bonding structure collapses to partially fill a space between the semiconductor light emitting device and the mount. In some embodiments, the compliant bonding structure is plurality of metal bumps (32) that undergo plastic deformation during bonding. In some embodiments, the compliant bonding structure is a porous metal layer (46).