Composite Barrier Structure for Low-k Defect and Electron Migration Control
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Solution Overview
Problem
Challenges arise during the scaling-down process of semiconductor devices in achieving improved quality, yield, performance, and reliability, particularly due to issues with low-k dielectric materials being susceptible to defects and deformation, and the need for effective protection of underlying conductive layers.
Innovation Solution
A semiconductor device with a composite barrier structure featuring a barrier layer of tantalum and an assisting blocking layer of copper manganese alloy, protected by a pre-cleaning solution containing chelating agents and corrosion inhibitors, which reduces profile defects and electron migration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a pre-cleaning solution containing chelating agents and corrosion inhibitors is used, then the underlying conductive layer is protected from defects and electron migration, but the process complexity increases
Solution Approach 1:
The pre-cleaning solution is applied before the main cleaning process to protect the underlying conductive layer in advance. This preliminary action prevents defects and electron migration before they can occur during subsequent processing steps, resolving the contradiction by proactively addressing reliability concerns while managing process complexity through staged treatment.
Solution Approach 2:
The pre-cleaning solution acts as an intermediary between the conductive layer and the subsequent cleaning processes. It contains chelating agents and corrosion inhibitors that mediate the interaction, protecting the conductive layer from harmful effects while allowing the cleaning process to proceed, thus improving reliability without excessive complexity increase.
2Reliability
If a composite barrier structure with multiple layers is used, then the protection against electron migration is improved, but the manufacturing complexity increases
Solution Approach 1:
The barrier structure is segmented into multiple functional layers: a tantalum barrier layer and a copper-manganese alloy assisting blocking layer. Each layer performs a specific function in preventing electron migration, with the tantalum providing primary barrier protection and the copper-manganese layer providing additional blocking assistance, thereby improving reliability while managing manufacturing complexity through functional division.
Solution Approach 2:
The patent employs composite materials in the barrier structure, specifically combining tantalum with copper-manganese alloy. This composite approach leverages the complementary properties of different materials to achieve superior protection against electron migration compared to single-material barriers, resolving the contradiction between improved protection and manufacturing complexity.
3Productivity
If the dimensions of semiconductor devices are scaled down, then the computing ability is improved, but the quality and yield deteriorate due to defects and deformation
Solution Approach 1:
The pre-cleaning solution with chelating agents and corrosion inhibitors applies preliminary anti-action to prevent defects and deformation before they can occur during device fabrication. This proactive protection counteracts the increased susceptibility to defects that arises from scaling down dimensions, allowing continued improvement in computing ability while maintaining quality and yield.
Solution Approach 2:
The composite barrier structure provides beforehand cushioning protection for the conductive layers against electron migration and defects. By establishing this protective structure in advance, the patent cushions against the quality deterioration that typically occurs with device scaling, enabling continued productivity improvement while preserving reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enhances the yield and reliability of semiconductor devices by protecting the underlying conductive layer and reducing defects, thereby improving the integrity of the composite barrier structure.
Implementation Method 1
The pre-cleaning solution includes a chelating agent and a corrosion inhibitor
Implementation Method 2
The pre-cleaning solution includes a chelating agent and a corrosion inhibitor
Implementation Method 3
the profile defects or electron migration may be reduced or avoided
Data Source
AI summary
The present application discloses a semiconductor device with a composite barrier structure and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a first dielectric layer having a feature opening on a substrate; a composite barrier structure in the feature opening, wherein the composite barrier structure includes a barrier layer in the feature opening and an assisting blocking layer on the barrier layer; and a conductive feature on the assisting blocking layer; wherein the barrier layer comprises tantalum, and the assisting blocking layer comprises copper manganese alloy.