Composite Semiconductor Board Layout for RF Amplifier Heat Dissipation

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Solution Overview

Problem

Radio frequency amplifier circuits face limitations in output power due to insufficient heat dissipation from transistors, which restricts the performance of semiconductor devices.

Innovation Solution

A semiconductor device with a composite board configuration, featuring a first semiconductor board with high thermal conductivity and a second semiconductor board with lower thermal conductivity, utilizes conductor protrusions to enhance heat dissipation by creating a heat transfer path between the two boards, with the second conductor protrusion being strategically positioned at least 55 μm away from the first conductor protrusion to improve thermal resistance reduction.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Power

If a single base material is used for the semiconductor device, then the structure is simple, but heat dissipation is insufficient and output power is restricted

Engineering Contradiction:

Improveoutput power of radio frequency amplifier circuitVSAvoidheat dissipation from transistor

Core Design Contradiction:

PowerVSTemperature

Solution Approach 1:

The base material is divided into two separate base materials: a first base material with high thermal conductivity for heat dissipation, and a second base material with lower thermal conductivity for electrical isolation. This segmentation allows the device to achieve both improved heat dissipation and adequate electrical isolation, enabling higher output power without thermal runaway.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

A conductor pillar bump is introduced as an intermediary component between the first base material and the second base material. This intermediary serves dual functions: providing a heat dissipation path from the transistor through the first base material, and maintaining electrical isolation between the two base materials, thus resolving the contradiction between heat dissipation and electrical isolation requirements.

Inventive Principle:

Principle #24Intermediary (Mediator)

2Temperature

If the second conductor protrusion is positioned close to the first conductor protrusion, then the device structure is compact, but thermal resistance is high and heat dissipation is insufficient

Engineering Contradiction:

Improveheat dissipation efficiencyVSAvoidspatial arrangement of conductor protrusions

Core Design Contradiction:

TemperatureVSDevice complexity

Solution Approach 1:

The patent applies local quality by creating different thermal pathways in different regions of the device. The first conductor protrusion is positioned to provide localized heat dissipation directly beneath the transistor, while the second conductor protrusion is positioned at a specific distance (greater than or equal to 55 μm) to provide additional heat dissipation pathways. This localized optimization of conductor protrusion positions improves overall heat dissipation efficiency without requiring a complete redesign of the device structure.

Inventive Principle:

Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration effectively increases heat dissipation from the transistors, enhancing the output power of radio frequency amplifier circuits by improving the thermal management of the semiconductor device.

Implementation Method 1

a first semiconductor board having higher thermal conductivity than the second semiconductor board

Methodology Applied

Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 2

utilizes conductor protrusions to enhance heat dissipation by creating a heat transfer path between the two boards

Methodology Applied

Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS20240332118A1Semiconductor device, semiconductor module, and system

Publication Date: 2024.10.03 MURATA MFG CO LTD

AI summary

A composite board includes a first member and a second member on a first surface that is one surface of the first member. A first conductor protrusion protrudes from the second member in a direction in which the first surface faces. A second conductor protrusion protrudes from the composite board in the direction in which the first surface faces. The first member includes a first semiconductor board, and the second member includes a second semiconductor board having lower thermal conductivity than the first semiconductor board. A radio frequency amplifier circuit including first transistors is in the second member. The first conductor protrusion is electrically connected to the first transistors and at least partially overlaps with the first transistors in a plan view of the first surface. The composite board includes a connection part that reaches the first semiconductor board or the second semiconductor board from the second conductor protrusion.