Composite Bond Structure for Stacked Semiconductor Reliability
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Solution Overview
Problem
Conventional bonding structures in semiconductor devices suffer from reduced electrical reliability due to material diffusion across interfaces and lack of uniformity, which affects the adhesion and bonding efficiency of stacked semiconductor structures.
Innovation Solution
A semiconductor device with a composite insulation structure comprising a nitrogen-containing silicon oxy-nitride layer and a denser silicon oxide layer, formed using high-density plasma chemical vapor deposition, which prevents material diffusion and enhances adhesion by embedding a conductive bonding layer within the composite insulation structure and lining it with a barrier layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional bond structures are used in stacked semiconductor devices, then the manufacturing process is simpler, but material diffusion occurs across interfaces reducing electrical reliability
Solution Approach 1:
The bonding structure is segmented into multiple functional layers: a first insulation layer, a conductive bonding layer, a second insulation layer, and a capping layer. Each layer serves a specific purpose in preventing material diffusion while maintaining electrical connectivity, thereby improving electrical reliability without excessive complexity.
Solution Approach 2:
The patent introduces intermediate barrier layers and insulation layers between the conductive bonding layer and the semiconductor structures. These intermediary layers act as diffusion barriers that prevent material contamination while allowing the bonding function to proceed, thus improving electrical reliability.
2Productivity
If conventional insulation layers are used, then the manufacturing process is easier, but material diffusion reduces adhesion and bonding efficiency
Solution Approach 1:
The bonding structure uses composite material arrangements where insulation layers (such as silicon oxide or silicon nitride) are combined with conductive bonding layers and capping layers. This composite structure provides both the insulation needed to prevent material diffusion and the conductivity needed for efficient bonding, thereby improving bonding efficiency while preventing harmful diffusion.
Solution Approach 2:
The patent modifies the material parameters and compositional parameters of the bonding structure layers. By selecting specific materials with appropriate diffusion barrier properties and adjusting layer thicknesses, the structure prevents material diffusion while maintaining effective bonding, thus improving bonding efficiency.
3Reliability
If a barrier layer is added between the conductive bonding layer and insulation layer, then material diffusion is prevented, but the manufacturing process becomes more complex
Solution Approach 1:
The patent merges multiple functions into integrated layers. For example, the capping layer serves both as a diffusion barrier and as a protective overlayer, while the insulation layers provide both electrical isolation and structural support. This merging reduces the need for separate barrier layers, maintaining electrical reliability while simplifying the manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively prevents material diffusion across interfaces, improves bonding uniformity, and increases the adhesion of semiconductor structures, thereby enhancing the electrical reliability and bonding efficiency of stacked semiconductor devices.
Implementation Method 1
A semiconductor device with a composite insulation structure comprising a nitrogen-containing silicon oxy-nitride layer and a denser silicon oxide layer, formed using high-density plasma chemical vapor deposition
Implementation Method 2
formed using high-density plasma chemical vapor deposition
Data Source
AI summary
A semiconductor device includes a substrate, a dielectric structure, a top metal layer and a bonding structure. The dielectric structure is disposed on the substrate. The top metal layer is disposed in the dielectric structure. The bonding structure is disposed on the dielectric structure and the top metal layer. The bonding structure includes a silicon oxide layer, a silicon oxy-nitride layer, a conductive bonding layer and a barrier layer. The silicon oxide layer is disposed on the dielectric structure. The silicon oxy-nitride layer covers the silicon oxide layer. The conductive bonding layer is disposed in the silicon oxide layer and the silicon oxy-nitride layer. The barrier layer covers a sidewall and a bottom of the conductive bonding layer.