Composite Contact Via Structure for 3D Memory Alignment
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Solution Overview
Problem
Conventional 3D memory devices face challenges in maintaining structural integrity and alignment due to high tensile stress and strength properties of conductive materials in contact vias, leading to distortion and misalignment issues.
Innovation Solution
Incorporating a stress compensation material with high compressive stress and strength in the central portion of contact vias, surrounded by conductive material, to balance and offset the tensile stress properties, thereby reducing distortion and improving structural alignment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If conductive material with high tensile stress and strength is used in contact vias, then the structural strength and reliability are improved, but distortion and misalignment occur due to stress accumulation
Solution Approach 1:
The patent introduces a stress compensation material with compressive stress properties to counterbalance the tensile stress generated by the conductive material. This counterweight approach neutralizes the net stress in the contact via, preventing distortion and misalignment while maintaining structural strength.
Solution Approach 2:
The contact via structure is designed as a composite system comprising both conductive material and stress compensation material. This composite structure combines the beneficial tensile strength of the conductive material with the compressive stress properties of the compensation material, achieving both strength and dimensional stability.
2Reliability
If the amount of conductive material deposited in contact vias is increased, then the electrical conductivity is improved, but the bowing and distortion increase proportionally
Solution Approach 1:
The stress compensation material acts as a counterweight to the tensile stress induced by increased conductive material deposition. By providing compressive stress, it offsets the bowing effect that would otherwise increase proportionally with the amount of conductive material, allowing higher conductivity without proportional distortion.
Solution Approach 2:
The patent changes the stress parameter of the contact via system by introducing material with opposite stress characteristics. This parameter change (from net tensile to balanced or net compressive stress) enables increased conductive material deposition without the proportional increase in bowing that would occur in conventional single-material structures.
3Ease of manufacture
If conventional single-material contact via structure is used, then the manufacturing process is simple, but stress mismatch and distortion occur between array and staircase regions
Solution Approach 1:
The contact via is designed as a composite structure with conductive material and stress compensation material. This composite approach addresses stress mismatch between array and staircase regions by providing internal stress balance, preventing distortion while maintaining manufacturability through established deposition techniques.
Solution Approach 2:
The stress compensation material is selectively placed within the contact via structure where stress accumulation occurs. This local quality approach targets the specific problem area (contact via stress) without requiring changes to the entire manufacturing process, maintaining ease of manufacture while improving stress uniformity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The stress compensation material effectively minimizes bowing and misalignment, enhancing the structural properties and reliability of 3D memory devices by balancing the tensile stress of conductive materials within contact vias.
Implementation Method 1
Incorporating a stress compensation material with high compressive stress and strength in the central portion of contact vias, surrounded by conductive material, to balance and offset the tensile stress properties
Data Source
AI summary
An apparatus comprising at least one contact structure. The at least one contact structure comprises a contact, an insulating material overlying the contact, and at least one contact via in the insulating material. The at least one contact structure also comprises a dielectric liner material adjacent the insulating material within the contact via, a conductive material adjacent the dielectric liner material, and a stress compensation material adjacent the conductive material and in a central portion of the at least one contact via. The stress compensation material is at least partially surrounded by the conductive material. Memory devices, electronic systems, and methods of forming the apparatus are also disclosed.


