Composite Die Frame Corners for Thermal Warpage Resistance

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Solution Overview

Problem

Temperature variations in semiconductor packages cause warpage due to differential coefficients of thermal expansion (CTE) between bonded layers, leading to potential cracking within or at interfaces between material components.

Innovation Solution

The implementation of frame edge reinforcement structures with a lower coefficient of thermal expansion than the molding compound material, combined with a molding compound frame component, forms a composite die frame that enhances resistance to thermally induced cracks.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Strength

If a molding compound frame component is used, then the package structure provides adequate mechanical support, but the high coefficient of thermal expansion causes warpage and cracking at temperature variations

Engineering Contradiction:

Improvemechanical supportVSAvoidresistance to warpage and cracking

Core Design Contradiction:

StrengthVSReliability

Solution Approach 1:

The patent applies composite materials by combining a molding compound frame component with frame edge reinforcement structures made of different materials (such as metal or ceramic) that have lower coefficients of thermal expansion. This composite structure integrates the mechanical support function of the molding compound with the thermal stability of the reinforcement materials, resolving the contradiction between providing adequate mechanical support and resisting warpage and cracking under temperature variations.

Inventive Principle:

Principle #40Composite materials

Solution Approach 2:

The patent implements local quality by placing frame edge reinforcement structures specifically at the corners and edges of the die frame where thermal stress and cracking are most likely to occur. Rather than uniformly modifying the entire frame, the reinforcement is localized to the critical regions experiencing the highest differential thermal expansion, thereby improving reliability where it is most needed while maintaining the overall mechanical support function.

Inventive Principle:

Principle #3Local quality

2Reliability

If frame edge reinforcement structures with lower CTE are added, then resistance to thermally induced cracks is enhanced, but the device complexity increases

Engineering Contradiction:

Improveresistance to thermally induced cracksVSAvoidstructure complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies segmentation by dividing the frame structure into distinct components: the base molding compound frame and separate frame edge reinforcement structures. These reinforcement structures are positioned as discrete elements at specific locations (corners and edges) rather than creating a monolithic complex structure. This segmented approach enhances crack resistance through material differentiation while keeping the overall device complexity manageable by limiting the number and placement of reinforcement elements.

Inventive Principle:

Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The composite die frame effectively reduces the magnitude of thermal expansion at corner regions, thereby suppressing or reducing cracking in the package structure, ensuring enhanced structural stability and reliability.

Implementation Method 1

Temperature variations on semiconductor packages may induce warpage in the package structure. Warpage may be a result of a differential coefficient of thermal expansion (CTE) between different bonded layers, e.g., silicon and organic substrate, in the package structure.

Methodology Applied

Scientific EffectDifferential coefficient of thermal expansion (CTE): Thermal Expansion

Data Source

PatentUS20250062176A1Frame edge reinforcement structure for package structures and methods of using the same

Publication Date: 2025.02.20 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

A device structure includes: an interposer including interposer dielectric material layers having formed therein interposer metal interconnect structures and die-side interposer bonding pads; at least one semiconductor die having formed therein in-die bonding pads that are bonded to a respective one of the die-side interposer bonding pads by metal-to-metal bonding; and a composite die frame laterally surrounding the at least one semiconductor die. The composite die frame includes a molding compound die frame portion including a molding compound material and frame edge reinforcement structures located at corners of the composite die frame and including a material having a lower coefficient of thermal expansion at 20 degrees Celsius than the molding compound material.