Composite Dielectric Capacitor Structure for High Capacitance Reliability
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Solution Overview
Problem
The challenge in semiconductor capacitors is to increase capacitance value while maintaining reliability and throughput, as reducing the dielectric layer thickness decreases reliability and high-k dielectric layers have slow deposition rates.
Innovation Solution
A semiconductor structure with a composite dielectric layer comprising at least one silicon nitride layer and at least one high-k dielectric layer, such as aluminum oxide, zirconium oxide, or tantalum oxide, is used between the electrode layers to enhance capacitance and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the thickness of the dielectric layer is reduced to increase capacitance value, then the capacitance value increases, but the reliability of the capacitor decreases
Solution Approach 1:
The patent employs a composite dielectric layer structure consisting of a first dielectric layer and a second dielectric layer with different dielectric constants. This composite structure allows the capacitor to achieve high capacitance value while maintaining sufficient overall thickness for reliability, as each layer can be optimized for different functions (one for high capacitance contribution, another for structural stability and reliability).
2Reliability
If a high-k dielectric layer is used to increase capacitance value and reliability, then the capacitance value and reliability improve, but the deposition rate decreases leading to reduced throughput
Solution Approach 1:
The dielectric layer is segmented into multiple distinct layers (first dielectric layer and second dielectric layer) that can be deposited using different processes and materials. This segmentation allows optimization of each layer's deposition process independently, enabling the use of high-k materials where needed while maintaining overall manufacturing throughput by distributing the deposition requirements across multiple manageable layers.
3Reliability
If a high-k dielectric layer is used to maintain sufficient thickness for reliability, then the reliability improves, but the deposition rate is slow reducing throughput
Solution Approach 1:
By using a composite dielectric structure with multiple layers having different dielectric constants, the patent reduces the total deposition time required. The first dielectric layer can be deposited thinner (reducing time) while the second dielectric layer compensates to maintain sufficient overall thickness for reliability, achieving both time efficiency and reliability requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composite dielectric layer improves capacitance value and reliability of the capacitor structure, while also increasing throughput.
Implementation Method 1
The first dielectric layer is disposed between the first electrode layer and the second electrode layer. The first dielectric layer is a composite dielectric layer including at least one first silicon nitride layer and at least one first high-k dielectric layer.
Data Source
AI summary
A semiconductor structure including a substrate and a capacitor structure is provided. The capacitor structure is disposed above the substrate. The capacitor structure includes a first electrode layer, a second electrode layer, and a first dielectric layer. The second electrode layer is disposed on the first electrode layer. The first dielectric layer is disposed between the first electrode layer and the second electrode layer. The first dielectric layer is a composite dielectric layer including at least one first silicon nitride layer and at least one first high-k dielectric layer.