Composite Dielectric IC Layers for Heat Removal and Isolation

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Solution Overview

Problem

The increasing density of transistors in integrated circuit (IC) devices, surrounded by electrically insulating materials that are poor thermal conductors, hinders effective heat dissipation, posing a challenge for managing the heat generated by sensitive semiconductor structures.

Innovation Solution

Enhancing the thermal conductivity of electrically insulating materials by doping or combining materials like silicon dioxide with boron arsenide or crystalline carbon, and using these materials to form composite insulating layers that allow for improved heat transfer while maintaining electrical isolation, coupled with heat spreaders and sinks for efficient heat dissipation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If electrically insulating materials are used to surround transistors, then electrical isolation is improved, but thermal conductivity deteriorates

Engineering Contradiction:
Improveelectrical isolationVSAvoidheat dissipation
Core Design Contradiction:
ReliabilityVSTemperature

Solution Approach 1:

The patent uses composite dielectric materials combining low-k material (for electrical isolation) with high thermal conductivity material (for heat dissipation). This creates a material that simultaneously provides both electrical insulation and thermal conduction, resolving the contradiction between these two opposing requirements.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent applies different material properties to different regions: the dielectric material surrounding transistors has low-k properties for electrical isolation, while incorporating thermally conductive pathways or materials in specific locations to enhance heat removal from hot spots, thereby achieving both electrical isolation and improved thermal management locally.

Inventive Principle:
Principle #3Local quality

2Productivity

If transistor density is increased, then computational capability is improved, but heat generation increases

Engineering Contradiction:
Improvecomputational capabilityVSAvoidheat generation
Core Design Contradiction:
ProductivityVSTemperature

Solution Approach 1:

The patent changes the thermal conductivity parameter of the dielectric material by incorporating thermally conductive additives or using composite structures. This allows the material to maintain its electrical isolation properties while significantly improving its thermal conductivity, enabling higher transistor density without proportional increases in temperature.

Inventive Principle:
Principle #35Parameter changes

3Ease of manufacture

If conventional dielectric material is used, then manufacturing simplicity is maintained, but thermal resistance increases

Engineering Contradiction:
Improvemanufacturing simplicityVSAvoidthermal resistance
Core Design Contradiction:
Ease of manufactureVSTemperature

Solution Approach 1:

The patent employs composite dielectric materials that combine conventional low-k dielectric material with thermally conductive materials. These composites can be integrated using modified existing manufacturing processes, maintaining relative manufacturing simplicity while dramatically improving thermal conductivity and reducing thermal resistance.

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach significantly enhances heat removal from IC dies, improving the reliability and electrical performance by creating a lower thermal resistance path for heat dissipation, even in densely packed transistor arrays.

Implementation Method 1

Enhancing the thermal conductivity of electrically insulating materials by doping or combining materials like silicon dioxide with boron arsenide or crystalline carbon

Methodology Applied
Scientific EffectThermal conductivity enhancement through doping: Dopants

Implementation Method 2

creating a lower thermal resistance path for heat dissipation

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 3

coupled with heat spreaders and sinks for efficient heat dissipation

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 4

significantly enhances heat removal from IC dies

Methodology Applied
Scientific EffectHeat dissipation: Heat Sink

Data Source

PatentUS20230395456A1Heat removal in integrated circuits with transistors and double-sided metal interconnects
Publication Date: 2023.12.07 INTEL CORP
  • US20230395456A1 patent drawing
  • US20230395456A1 patent drawing
  • US20230395456A1 patent drawing

AI summary

Thermally conductive, electrically insulating materials and their manufacture on integrated circuit (IC) dies. An IC die may include a substrate with transistors on one side and, on the first and/or a second side, electrically insulating materials enhanced with thermally conductive materials. Such an IC die may be included in a system with a power supply. Such materials may be co-deposited, or interspersed, or interleaved together in a composite material.