Composite Dielectric Structure for Leakage Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In semiconductor manufacturing, high dielectric constant materials like HfO2 and ZrO2 face challenges in increasing their k value while maintaining low leakage current and high breakdown voltage, which is crucial for advanced devices beyond the 30 nm node.
Innovation Solution
A composite dielectric structure is formed using alternating layers of doped dielectric materials (Laminate Dielectric Layers, Alloy Dielectric Layers, and Co-deposit Dielectric Layers) with Leakage Blocking Layers, incorporating dopants into base dielectric layers through atomic layer deposition, allowing for controlled doping concentrations and thicknesses to modulate leakage current while maintaining high dielectric constants.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Force
If doping materials are implanted into HfO2 and ZrO2 to increase dielectric constant, then the k value increases, but leakage current increases and breakdown voltage decreases
Solution Approach 1:
The patent divides the dielectric layer into multiple alternating sub-layers: high-k dielectric material layers (HfO2, ZrO2, or their mixtures) and doping material layers (lanthanide metals, group III, IV, and V metals, or their oxides). Each layer is deposited separately using ALD processes with controlled thickness (0.5-200 nm per doping layer). This segmentation allows the high-k layers to provide dielectric constant while the doping layers provide electrical property control, resolving the contradiction between high k value and low leakage current.
Solution Approach 2:
The patent applies different materials and doping concentrations at different locations within the dielectric structure. The base dielectric layer uses high-k materials (HfO2, ZrO2, or ZrO2/HfO2 mixtures) while doping layers use specific lanthanide or group III-IV-V metals at varying concentrations (0.5-50%). The local composition is optimized: high-k regions provide dielectric constant while doped regions provide leakage control, achieving both high dielectric constant and low leakage current simultaneously.
2Force
If thicker doping layers are used to increase dielectric constant, then k value improves, but manufacturing precision and layer control become difficult
Solution Approach 1:
The patent employs periodic alternating deposition cycles using Atomic Layer Deposition (ALD) to sequentially deposit base dielectric material and doping material. Each cycle consists of: (1) depositing base dielectric layer, (2) depositing doping material layer, (3) repeating the cycle. This periodic action enables precise control of each layer's thickness (0.5-200 nm) and doping concentration (0.5-50%), achieving both high dielectric constant and manufacturing precision through repeated, controlled deposition sequences.
Solution Approach 2:
The patent controls layer thickness and doping concentration by adjusting ALD process parameters: precursor pulse duration, temperature (100-500°C), pressure, and flow rates. By changing these parameters, the patent achieves precise control over doping layer thickness (0.5-200 nm) and concentration (0.5-50%), enabling high dielectric constant materials to be deposited with atomic-level precision and controlled electrical properties.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composite structure achieves a higher dielectric constant than HfO2 or ZrO2 alone, with reduced leakage current and increased breakdown voltage, along with improved step coverage, enhancing the performance of semiconductor devices.
Implementation Method 1
Atomic layer deposition (ALD) processes for fabricating composite dielectric structures containing BDL, LDL, ADL, CDL and LBL materials
Implementation Method 2
To further increase the dielectric constant of oxide materials, implantation of doping materials into HfO2 and ZrO2 have been explored
Implementation Method 3
Leakage blocking materials may include SiO2 and Al2O3
Data Source
AI summary
A composite dielectric structure having one or more Leakage Blocking Layers (LBL) interleaved with one or more Laminate Dielectric Layers (LDL), Alloy Dielectric Layers (ADL), or Co-deposit Dielectric Layers (CDL). Each LDL, ADL, and CDL includes dopants incorporated in a respective base dielectric layer (BDL); where LDLs are formed by incorporating a doping layer into a BDL using a laminate method, ADLs are formed by incorporating a dopant into a BDL using an alloying method; and CDLs are formed by pulsing a BDL base material and a dopant together using a co-deposit method.