Composite Dielectric for High Capacitance Low Leakage

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Solution Overview

Problem

As electronic devices miniaturize, achieving desirable capacitance while minimizing leakage current becomes a challenge due to the trade-off between high dielectric constant and energy bandgap, where high dielectric constants often lead to increased leakage currents.

Innovation Solution

A composite dielectric is developed, comprising a metal oxide with a rocksalt crystal structure and beryllium oxide, where the beryllium oxide has a modified crystal structure with longer Be—O bond lengths, and a multi-nary oxide is formed, achieving a high dielectric constant and large energy bandgap simultaneously, thereby reducing leakage current.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a dielectric with a high dielectric constant is used to maintain capacitance in small pitch sizes, then capacitance is improved, but leakage current increases

Engineering Contradiction:
ImprovecapacitanceVSAvoidleakage current
Core Design Contradiction:
ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The patent employs a composite dielectric structure consisting of a first layer containing metal oxide with rocksalt crystal structure (MgO, CaO, SrO, or BaO) and a second layer containing beryllium oxide. This composite structure combines materials with complementary properties: the rocksalt-structure metal oxide provides high dielectric constant while the beryllium oxide layer with modified crystal structure contributes to reduced leakage current, achieving both high capacitance and low leakage in the composite dielectric

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent applies local quality by creating distinct layers with different material compositions and crystal structures. The first layer uses metal oxide with rocksalt structure for high dielectric constant, while the second layer uses beryllium oxide with modified crystal structure (Be-O bond length ≥1.70 Å) for low leakage. Each layer is optimized for its specific function, and their combination achieves the overall performance target of high capacitance with low leakage current

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS11037728B2Dielectric and capacitor and electronic device
Publication Date: 2021.06.15 SAMSUNG ELECTRONICS CO LTD
  • US11037728B2 patent drawing
  • US11037728B2 patent drawing
  • US11037728B2 patent drawing

AI summary

A dielectric including a composite including a metal oxide having a rocksalt crystal structure and a beryllium oxide, and a capacitor, a transistor, and an electronic device including the same.