Composite Dielectric Layer Structure for Low-Leakage Thin Memory Films

The patent employs a composite dielectric layer structure consisting of multiple layers with different materials and functions. The first layer uses a high-k dielectric material to maintain high capacitance, while the second layer uses a low-leakage dielectric material to suppress leakage current. This composite structure resolves the contradiction by combining materials with complementary properties, allowing thin thickness for high integration density while maintaining reliability through the functional division of layers.

The dielectric layer is segmented into multiple functional layers rather than using a single uniform layer. The first layer is dedicated to providing high dielectric constant for capacitance, while the second layer is dedicated to providing low leakage current characteristics. This segmentation allows each layer to be optimized for its specific function, resolving the contradiction between thin thickness requirements and leakage current control.

The patent uses a composite dielectric structure where the second layer is specifically designed with low-leakage characteristics to counteract the increased leakage current that occurs when the overall dielectric layer thickness is reduced. This allows the device to achieve small size through thin thickness while the composite structure prevents excessive leakage current.

Different regions of the dielectric layer structure are assigned different material properties tailored to local requirements. The first layer uses high-k material where high capacitance is needed, while the second layer uses low-leakage material where leakage suppression is critical. This local optimization of material properties allows thin thickness without excessive leakage.