Composite Semiconductor Device with Integrated Diode Protection
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Solution Overview
Problem
High voltage group III-V transistors, such as III-Nitride FETs and HEMTs, are susceptible to catastrophic failure in extreme operating environments due to their tolerance for high voltages, despite being nominally rated for high voltage operations.
Innovation Solution
A composite semiconductor device is designed with a diode placed across the source and drain of the III-V transistor, featuring a breakdown voltage higher than the operating voltage but lower than the catastrophic failure voltage, monolithically integrated to minimize parasitic inductance and provide nondestructive avalanche breakdown protection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If high voltage group III-V transistors are used in extreme operating environments, then the transistor can operate at high voltages, but the transistor becomes susceptible to catastrophic failure
Solution Approach 1:
A diode is integrated with the III-V transistor to provide beforehand cushioning protection. The diode is configured to enter avalanche breakdown at a voltage lower than the transistor's breakdown voltage but higher than the operating voltage, thereby cushioning against voltage spikes before they can cause catastrophic failure of the transistor.
Solution Approach 2:
The diode serves as an intermediary protective element between the voltage source and the III-V transistor. It mediates by clamping voltage excursions through controlled avalanche breakdown, protecting the transistor from direct exposure to damaging high voltages while allowing normal operation.
2Reliability
If a diode is added to protect the transistor, then catastrophic failure is prevented, but device complexity increases
Solution Approach 1:
The diode and III-V transistor are merged into a single composite device structure with integrated fabrication. The diode is formed in the same semiconductor substrate as the transistor, sharing common regions and processing steps, thereby reducing overall device complexity despite adding protective functionality.
Solution Approach 2:
The composite device structure serves multiple functions: the III-V transistor provides high-voltage switching capability while the integrated diode provides over-voltage protection. This multi-functionality is achieved within a single device package, avoiding the need for separate protection circuits.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively protects the transistor from catastrophic failure by ensuring the diode's breakdown voltage is lower than the transistor's, resulting in a robust and failure-resistant composite semiconductor device suitable for extreme environments.
Implementation Method 1
featuring a breakdown voltage higher than the operating voltage but lower than the catastrophic failure voltage, monolithically integrated to minimize parasitic inductance and provide nondestructive avalanche breakdown protection
Data Source
AI summary
There are disclosed herein various implementations of composite semiconductor devices. In one implementation, such a composite semiconductor device includes a transition body formed over a diode, the transition body including more than one semiconductor layer. The composite semiconductor device also includes a transistor formed over the transition body. The diode may be connected across the transistor using through-semiconductor vias, external electrical connectors, or a combination of the two.