Composite Hard Mask Structure for Efficient Semiconductor Etching
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Solution Overview
Problem
The manufacturing and integration of semiconductor devices are complex and prone to deficiencies due to the miniaturization and increased complexity, necessitating improvements in the manufacturing process to address these issues.
Innovation Solution
A semiconductor device structure is designed with a composite hard mask comprising a first and second semiconductor structure made of different materials, which are integrated over multiple dielectric layers, allowing for efficient removal of undesired portions during etching processes, thereby reducing manufacturing costs and processing time.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If semiconductor devices are miniaturized to increase integration, then device functionality and integration density are improved, but manufacturing complexity and process deficiencies increase
Solution Approach 1:
The hard mask is divided into two separate layers: a first hard mask layer and a second hard mask layer. This segmentation allows each layer to be optimized independently for different etching processes, simplifying the overall manufacturing complexity while enabling higher integration density through precise pattern transfer at miniaturized scales.
Solution Approach 2:
The patent introduces a vertical dimension to the hard mask structure by stacking two hard mask layers at different heights. The first hard mask layer is positioned at a first height and the second hard mask layer is positioned at a second height, creating a multi-level structure that enables complex 3D device fabrication while maintaining manufacturing control.
2Adaptability or versatility
If multiple dielectric layers are integrated to increase device functionality, then device capabilities are improved, but manufacturing process complexity increases
Solution Approach 1:
The multi-layer hard mask structure serves multiple functions: it acts as an etch mask for different etching processes, provides structural support during fabrication, and enables pattern transfer across multiple dielectric layers. This universal structure simplifies the manufacturing process by consolidating multiple functions into a single integrated system.
Solution Approach 2:
The first hard mask layer is formed and positioned before the second dielectric layer is deposited, and the second hard mask layer is formed after the second dielectric layer is in place. This preliminary sequencing of operations allows each layer to be prepared in advance with appropriate material properties and geometries, reducing overall process complexity.
3Ease of manufacture
If conventional single-layer hard mask is used, then manufacturing process is simple, but etching efficiency and yield are insufficient
Solution Approach 1:
The patent employs a composite hard mask structure with two distinct layers, each potentially made of different materials optimized for specific etching selectivities. This composite structure improves etching efficiency and device yield by enabling selective removal of different dielectric layers, while the additive manufacturing approach maintains relative process simplicity.
Data Source
AI summary
A semiconductor device structure includes a first dielectric layer disposed over a semiconductor substrate, and a second dielectric layer disposed over the first dielectric layer. The semiconductor device structure also includes a first semiconductor structure disposed over the second dielectric layer. The first semiconductor structure has a first portion and a second portion separated from each other by an opening. The semiconductor device structure further includes a second semiconductor structure disposed over the second dielectric layer and in the opening. The second semiconductor structure has a first portion and a second portion separated from each other. Moreover, the first portion of the second semiconductor structure is in direct contact with the first portion of the first semiconductor structure, and the second portion of the second semiconductor structure is in direct contact with the second portion of the first semiconductor structure.