Composite Insulation Layer for Low-Voltage Thin Film Transistors
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Solution Overview
Problem
Existing methods for manufacturing oxide TFT array substrates face challenges in suppressing capacitance effects while maintaining a low threshold voltage, as inorganic materials require complex processes and high dielectric constants, while organic polymeric materials result in higher threshold voltages and leakage currents.
Innovation Solution
A method involving the formation of a siloxane material layer, followed by oxidation to create an inorganic silicon film on its surface, and subsequent curing to produce an insulation layer with a low dielectric constant and high chemical stability, which effectively inhibits capacitance effects and reduces power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If inorganic materials (silicon nitride, silicon dioxide) are used for the insulation layer, then the dielectric constant is high and threshold voltage is improved, but the process complexity increases and multiple depositions are needed
Solution Approach 1:
The patent uses a composite insulation layer structure combining organic polymeric material (low dielectric constant) with inorganic material (high dielectric constant) deposited on its surface. This composite structure allows the bulk organic material to provide low capacitance while the surface inorganic layer provides high dielectric constant for threshold voltage control, resolving the contradiction between low capacitance and high threshold voltage requirements.
2Ease of manufacture
If organic polymeric material is used for the insulation layer, then the processing is simple and production cost is reduced, but the dielectric constant is low requiring higher threshold voltage which increases leakage current
Solution Approach 1:
The patent combines organic polymeric material (easy to process, low dielectric constant) with a thin inorganic material layer (high dielectric constant) on its surface. The organic bulk maintains low capacitance and processing simplicity, while the inorganic surface layer enables lower threshold voltage operation, thereby reducing leakage current without sacrificing ease of manufacture.
3Object-generated harmful factors
If inorganic insulation film is made thicker to suppress capacitance effect, then capacitance suppression is improved, but the number of depositions increases and process complexity worsens
Solution Approach 1:
The patent uses a composite structure where the bulk organic polymeric material provides low dielectric constant for capacitance suppression, while a thin inorganic layer on the surface provides high dielectric constant. This allows effective capacitance suppression without requiring thick inorganic films, thereby reducing the number of depositions and process complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution stabilizes capacitance effects, allows for low-voltage TFT operation, and simplifies the manufacturing process, reducing production costs and complexity while maintaining high chemical stability.
Implementation Method 1
oxidizing the siloxane material layer through UV light or ozone such that an inorganic silicon film is formed on a surface of the siloxane material layer
Data Source
AI summary
The present disclosure discloses a thin film transistor, an array substrate and their manufacturing methods, and a display apparatus. The method for manufacturing the thin film transistor of the present disclosure comprises a step of forming an insulation layer, wherein the step of forming the insulation layer further comprises forming a siloxane material layer, oxidizing the siloxane material layer such that an inorganic silicon film is formed on a surface of the siloxane material layer, and curing the oxidized siloxane material layer to obtain the insulation layer. In this disclosure, the outer layer of the insulation layer is an inorganic silicon film which is a commonly-used material for making the insulation layer in prior art, and the inner layer of the insulation layer is made of the siloxane material having a low dielectric constant and high chemical stability.