Composite Interconnect Structure With Self-Aligned Selective Deposition
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Solution Overview
Problem
The manufacturing and integration of semiconductor devices are complex and costly, leading to inefficiencies and increased processing time due to the need for complicated lithographic steps.
Innovation Solution
A semiconductor device structure with a composite interconnect structure is developed, where lower and upper semiconductor structures are made of different materials, and oxide portions with an L-shape are used to selectively deposit the upper structures, eliminating the need for costly lithographic steps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional lithographic steps are used for depositing upper semiconductor structures, then manufacturing precision can be maintained, but manufacturing costs and processing time increase significantly
Solution Approach 1:
The oxide portion with L-shape configuration enables self-aligned selective deposition. The upper semiconductor structure is selectively deposited only on exposed surfaces through the geometric configuration of the oxide portion, eliminating the need for external lithographic alignment processes. The structure itself provides the alignment reference, making the process self-service and reducing both cost and complexity.
Solution Approach 2:
The invention changes the physical and chemical parameters of the deposition process by utilizing selective epitaxial growth conditions. By controlling temperature, pressure, and precursor flow rates, the deposition occurs selectively on exposed silicon surfaces while being inhibited on oxide surfaces, achieving precise patterning without lithography.
2Productivity
If conventional lithographic steps are used for pattern formation, then pattern precision can be achieved, but the number of manufacturing steps and processing time increase
Solution Approach 1:
The invention extracts and eliminates the lithographic step from the conventional semiconductor manufacturing process. By using the oxide portion's L-shape geometry to define the deposition pattern, the patent removes the need for photoresist coating, exposure, and development steps, significantly reducing the number of manufacturing steps while maintaining pattern precision.
Solution Approach 2:
The oxide portion is formed in advance with a specific L-shape configuration that pre-defines the deposition pattern. This preliminary structuring action eliminates the need for subsequent lithographic patterning, as the oxide geometry itself serves as the pattern template for selective deposition.
3Adaptability or versatility
If multiple lithographic steps are used for complex integration, then device functionality can be enhanced, but manufacturing complexity and costs increase
Solution Approach 1:
The oxide portion serves multiple functions simultaneously: it acts as a deposition mask, a structural support, an alignment reference, and a protective layer. This multi-functionality reduces the need for separate process steps and components, simplifying the overall manufacturing process while enabling complex device integration.
Solution Approach 2:
The invention segments the manufacturing process into distinct functional modules: oxide portion formation, selective deposition, and integration. Each module performs a specific function independently, making the overall complex process more manageable and easier to control, thereby reducing manufacturing complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces manufacturing costs and processing time by allowing selective deposition of upper semiconductor structures without the need for lithographic steps, thereby simplifying the manufacturing process.
Implementation Method 1
the materials of the upper semiconductor structure and the lower semiconductor structure are selected such that the upper semiconductor structure can be selectively deposited on the exposed surfaces of the lower semiconductor structure
Data Source
AI summary
A semiconductor device structure includes a first lower semiconductor structure disposed over a semiconductor substrate. The first lower semiconductor structure has a first sidewall and a second sidewall opposite to the first sidewall. The semiconductor device structure also includes a first upper semiconductor structure covering a top surface and the first sidewall of the first lower semiconductor structure. The first lower semiconductor structure and the first upper semiconductor structure include different materials. The semiconductor device structure further includes a first oxide portion disposed over the semiconductor substrate and extending along the second sidewall of the first lower semiconductor structure. The first oxide portion has an L-shape.