Composite Interposer Structure for High-Density Chiplet Packaging
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Solution Overview
Problem
Conventional semiconductor packaging methods, such as C4 solder ball connections and wire-bonding, face limitations in accommodating multiple semiconductor dies and achieving high interconnect density, while newer approaches like TSV and silicon interposer require further improvements for advanced semiconductor packages.
Innovation Solution
A composite interposer structure is developed, comprising a substrate with bonded chiplets and insulator structures, featuring smaller metallization feature pitches and multiple hardware interfaces for efficient electrical coupling between IC chips, allowing for high interconnect density and flexible packaging.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If C4 solder ball connections are used for flip chip interconnections, then electrical connection between semiconductor devices and substrates is achieved, but the mounting area size limits the number of semiconductor devices that can be accommodated
Solution Approach 1:
The patent transitions from planar mounting to three-dimensional stacked die architecture. Multiple semiconductor devices are arranged in vertical stacks connected by TSVs (through-silicon vias), enabling more devices to be packaged within the same footprint by utilizing the vertical dimension rather than expanding the mounting area horizontally.
Solution Approach 2:
The patent implements nested stacking where semiconductor devices are arranged in hierarchical layers. Devices are stacked vertically with intermediate interposer layers, creating a nested configuration where multiple devices are contained within a compact vertical structure, effectively increasing device density without proportionally increasing the substrate area.
2Quantity of substance
If conventional wire-bonding approaches are used, then semiconductor devices can be connected to substrates, but the number of semiconductor die that can be included in a single package is limited
Solution Approach 1:
The patent divides the package into modular segments including multiple semiconductor devices, intermediate interposer layers, and TSV structures. Each device can be independently packaged and then stacked, allowing for scalable configuration. The interposer layers act as independent segments that facilitate electrical interconnection between stacked devices, simplifying the overall packaging process while enabling high device counts.
3Reliability
If TSV and silicon interposer approaches are used, then high performance MCM and SiP can be realized, but additional improvements are needed for advanced semiconductor packages
Solution Approach 1:
The patent employs composite interposer structures combining silicon substrates with embedded TSVs, metal interconnect layers, and dielectric materials. The interposer itself is a composite structure integrating multiple materials to achieve both mechanical support and electrical interconnection functions, enabling high-performance stacked die packaging while managing complexity through material integration.
Data Source
AI summary
Techniques and mechanisms for high interconnect density communication with an interposer. In some embodiments, an interposer comprises a substrate and portions disposed thereon, wherein respective inorganic dielectrics of said portions adjoin each other at a material interface, which extends to each of the substrate and a first side of the interposer. A first hardware interface of the interposer spans the material interface at the first side, wherein a first one of said portions comprises first interconnects which couple the first hardware interface to a second hardware interface at the first side. A second one of said portions includes second interconnects which couple one of first hardware interface or the second hardware interface to a third hardware interface at another side of the interposer. In another embodiment, a metallization pitch feature of the first hardware interface is smaller than a corresponding metallization pitch feature of the second hardware interface.