Composite Oxide Capacitor Dielectric for High Capacitance and Breakdown Field

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Solution Overview

Problem

Existing capacitors using composite oxides face limitations in terms of capacitance and dielectric breakdown field, necessitating further improvements.

Innovation Solution

A capacitor design utilizing a dielectric material composed of O, Cs, W, and at least one of Ti, Zr, or Hf, with specific compositional and structural characteristics, enhancing both capacitance and dielectric breakdown field.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional composite oxides are used as dielectric material, then the capacitor structure is simple and easy to manufacture, but the capacitance and dielectric breakdown field are limited

Engineering Contradiction:
Improvedielectric breakdown fieldVSAvoiddielectric material composition
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent uses a composite oxide dielectric material containing Cs, W, and at least one of Ti, Zr, or Hf. This composite material approach combines multiple elements to achieve both high capacitance and high dielectric breakdown field, resolving the contradiction between performance improvement and material complexity by selecting specific element combinations that work synergistically

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent optimizes the compositional parameters of the dielectric material, specifically controlling the ratios of Cs, W, and the transition metals (Ti, Zr, Hf). By adjusting these chemical composition parameters, the patent achieves enhanced capacitance and dielectric breakdown field while maintaining manufacturability

Inventive Principle:
Principle #35Parameter changes

2Ease of manufacture

If the dielectric material composition is simplified for ease of manufacture, then manufacturing cost decreases, but capacitance and dielectric breakdown field are compromised

Engineering Contradiction:
Improvedielectric material fabricationVSAvoidcapacitance
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent maintains relatively simple fabrication processes while optimizing the chemical composition parameters of the dielectric layer. The use of standard sputtering or chemical vapor deposition techniques with controlled stoichiometry allows ease of manufacture to be preserved while achieving high capacitance through precise compositional control of the Cs-W-transition metal oxide system

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The proposed capacitor achieves high capacitance and dielectric breakdown field, thereby increasing energy density.

Implementation Method 1

a capacitor comprising a first electrode, a second electrode, and a dielectric material disposed between the first electrode and the second electrode

Methodology Applied
Scientific EffectCapacitance: Capacitance

Implementation Method 2

advantageous in terms of a capacitance and a dielectric breakdown field

Methodology Applied
Scientific EffectDielectric strength: Dielectric

Data Source

PatentUS20250372303A1Capacitor, electrical circuit, circuit board, device, and dielectric material for capacitor
Publication Date: 2025.12.04 PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD
  • US20250372303A1 patent drawing
  • US20250372303A1 patent drawing
  • US20250372303A1 patent drawing

AI summary

The present disclosure provides a capacitor that is advantageous in terms of a capacitance and a dielectric breakdown field. According to the present disclosure, a capacitor comprises a first electrode, a second electrode, and a dielectric material. The dielectric material is disposed between the first electrode and the second electrode. The dielectric material comprises a composite oxide. The composite oxide is composed of O, Cs, W, and at least one selected from the group consisting of Ti, Zr, and Hf.