Composite Passivation Layout for Stress-Resistant Semiconductor Contacts
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Solution Overview
Problem
Semiconductor devices face challenges with passivation due to high electric fields, moisture susceptibility, and thermo-mechanical stress, leading to potential corrosion and crack formation, especially when inorganic passivation is in contact with metallization layers.
Innovation Solution
A semiconductor device design featuring a contact metallization layer, an inorganic passivation structure, and an organic passivation layer, where the organic passivation layer is positioned laterally between the metallization layer and the inorganic passivation structure, with parts of the organic layer closer to the substrate than others, creating a gap to reduce stress and improve robustness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If inorganic passivation is used, then breakdown resistance is improved, but susceptibility to thermo-mechanical stress and crack formation increases
Solution Approach 1:
The patent employs a composite passivation structure combining organic passivation material (first passivation layer) with inorganic passivation material (second passivation layer). The organic layer provides flexibility and stress resistance, while the inorganic layer provides breakdown resistance. This composite approach allows the device to simultaneously achieve both improved reliability against electrical breakdown and improved strength against thermo-mechanical stress, resolving the technical contradiction between these two properties.
2Reliability
If inorganic passivation contacts metallization layer, then breakdown resistance is improved, but crack formation under thermo-mechanical stress increases
Solution Approach 1:
The patent introduces an organic passivation layer as an intermediary between the inorganic passivation layer and the metallization layer. This intermediate organic layer acts as a buffer that absorbs and distributes thermo-mechanical stress, preventing direct stress transmission that would cause cracks in the inorganic passivation or metallization layer. The organic material's flexibility and lower modulus of elasticity allow it to accommodate thermal expansion differences, thereby eliminating crack formation while maintaining the breakdown resistance provided by the inorganic layer.
3Object-affected harmful factors
If organic passivation is used, then resistance to moisture is improved, but susceptibility to corrosion increases
Solution Approach 1:
The patent uses a composite passivation system where the organic passivation layer (first passivation layer) provides moisture resistance by forming a hydrophobic barrier, while the inorganic passivation layer (second passivation layer) provides corrosion resistance through its chemical stability and protective properties. The combination of these two materials with complementary functions allows the device to simultaneously achieve both moisture resistance and corrosion resistance, resolving the technical contradiction between these properties.
Data Source
AI summary
A semiconductor device includes a contact metallization layer that includes aluminum and is arranged on a semiconductor substrate, an inorganic passivation structure arranged on the semiconductor substrate, an organic passivation layer comprising a first part that is arranged on the contact metallization layer, and a second part that is arranged on the inorganic passivation structure, a first layer structure including a first part that is in contact with the contact metallization layer, a second part that is contact with the inorganic passivation structure, and a third part that is disposed on the semiconductor substrate laterally between the inorganic passivation structure and the organic passivation layer.