Composite Photoresist Composition for Low-Roughness EUV Patterning
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Solution Overview
Problem
Existing semiconductor photolithography technologies face challenges in achieving small feature sizes and smooth surface morphology with low roughness, particularly in extreme ultraviolet (EUV) lithography, due to the poor surface roughness and nanocrystalline solids of metal oxide based photoresists.
Innovation Solution
A novel photoresist composition comprising a first photoresist with formulas (a1) or (a2) and a second photoresist with formulas (g), (h), or (j) is used to form a film with low roughness and high resolution, enabling small half-pitch patterns and low exposure doses in EUV lithography.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If metal oxide based photoresist is used, then high resolution and small feature sizes can be achieved, but surface roughness increases and smooth morphology is lost
Solution Approach 1:
The patent employs a composite photoresist system consisting of a metal oxide component (providing high resolution and small feature size capability) combined with an organic polymer component (providing smooth surface morphology). This composite approach allows the material to simultaneously achieve the high precision needed for sub-10nm features while maintaining the surface smoothness required for low line edge roughness, effectively resolving the contradiction between resolution and surface quality.
2Shape
If conventional photoresist is used, then smooth surface morphology is achieved, but resolution and feature size reduction are limited
Solution Approach 1:
The patent combines organic polymer photoresist (which provides smooth surface morphology) with metal oxide photoresist (which enables high resolution and small feature sizes). The synergistic interaction between these two material types allows the photoresist to achieve both smooth surface morphology and the high manufacturing precision needed for advanced node semiconductor fabrication, overcoming the limitations of conventional single-component photoresists.
3Manufacturing precision
If metal oxide photoresist is used for high resolution, then line edge roughness increases, but if conventional photoresist is used, then resolution is insufficient
Solution Approach 1:
The patent creates a composite photoresist where metal oxide nanoparticles or clusters are dispersed within an organic polymer matrix. The metal oxide component provides the high resolution and sharp line edges necessary for precise pattern definition, while the organic polymer component ensures smooth surface morphology and low line edge roughness. This composite structure simultaneously optimizes both measurement precision and manufacturing precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The novel photoresist composition achieves a large smooth surface morphology with low line edge and width roughness, enabling small feature sizes and effective pattern transfer in semiconductor devices.
Implementation Method 1
The photoresist layer is exposed to a pattern of extreme ultraviolet (EUV) radiation
Data Source
AI summary
A photoresist composition comprises a first photoresist. The first photoresist has a formula (a1) or a formula (a2):and wherein each of R1, R1 and R2 individually is one of formulae (b) to (c):in which R in the formulae (b) to (c) is H, n-CnH2n+1, i-CnH2n+1, or t-CnH2n+1, each of m in the formula (a1) and (a2) individually is greater than 8, y is (10−m)/2, and n is 1 to 6.