Composite PN-Junction for Harmonic Reduction
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Solution Overview
Problem
Existing semiconductor devices, such as ESD protection and TVS devices, generate unwanted odd harmonics due to their non-linear electrical properties, which interfere with other frequency bands, and current technologies struggle to minimize odd harmonic generation while maintaining a low breakdown voltage and adjustable grading coefficient.
Innovation Solution
A semiconductor device with a composite pn-junction structure comprising two partial pn-junction structures with different grading coefficients, allowing for adjustable breakdown voltage and grading coefficient, is designed to minimize odd harmonic generation by subdividing the junction into areas with varying doping levels and implantation doses.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-generated harmful factors
If a single pn-junction structure with uniform doping is used, then the device structure is simple, but odd harmonic generation is high and cannot be minimized
Solution Approach 1:
The pn-junction is divided into multiple regions with different doping concentrations (first doped region with concentration N1, second doped region with concentration N2). Each region has a different grading coefficient (m1 for first region, m2 for second region), allowing independent optimization of harmonic generation in each segment while maintaining overall junction functionality.
Solution Approach 2:
Different regions of the junction are assigned different local properties through varying doping concentrations and grading coefficients. The first doped region has doping concentration N1 and grading coefficient m1, while the second doped region has doping concentration N2 and grading coefficient m2, creating localized electrical characteristics that collectively minimize odd harmonics.
2Object-generated harmful factors
If the junction grading coefficient is increased to minimize odd harmonics, then odd harmonic generation is reduced, but the breakdown voltage increases
Solution Approach 1:
The invention changes multiple parameters simultaneously: doping concentrations (N1, N2), grading coefficients (m1, m2), and region geometries are optimized together to achieve the dual objective of minimizing odd harmonics while maintaining low breakdown voltage. This multi-parameter optimization allows decoupling the trade-off between harmonic generation and breakdown characteristics.
Solution Approach 2:
The junction employs a composite doping structure with two distinct doped regions having different electrical properties. This composite approach allows the device to exhibit optimized electrical characteristics that neither uniform doping configuration could achieve alone, specifically minimizing odd harmonics while maintaining low breakdown voltage.
3Reliability
If the breakdown voltage is reduced for better ESD protection, then ESD protection performance is improved, but odd harmonic generation increases
Solution Approach 1:
By independently adjusting doping concentrations (N1, N2) and grading coefficients (m1, m2) in different regions, the invention achieves low breakdown voltage for ESD protection while simultaneously minimizing odd harmonic generation. The separate optimization of each region's parameters allows this dual performance improvement.
Solution Approach 2:
The junction exhibits dynamic electrical characteristics through its composite structure, where different regions contribute differently under various operating conditions. During ESD events, the low breakdown voltage provides protection, while during RF signal operation, the specific grading coefficients minimize harmonic generation.
Data Source
AI summary
A semiconductor device includes a composite pn-junction structure in a semiconductor substrate, wherein the composite pn-junction structure has a first junction grading coefficient m1, with m1≥0.50. The composite pn-junction structure includes a first partial pn-junction structure and a second partial pn-junction structure, wherein the first partial pn-junction structure has a first partial junction grading coefficient m11, and wherein the second partial pn-junction structure has a second partial junction grading coefficient m12. The first partial junction grading coefficient m11 is different to the second partial junction grading coefficient m12, with m11≠m12. At least one of the first and second partial junction grading coefficients m11, m12 is greater than 0.50, with m11 and/or m12>0.50. The first junction grading coefficient m1 of the composite pn-junction structure is based on a combination of the first and second partial junction grading coefficients m11, m12.