Composite Spacer Structure for Leakage-Controlled Semiconductor Gates
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Solution Overview
Problem
Semiconductor devices face performance degradation due to leakage current and integration challenges during manufacturing, particularly in the formation of supporting structures which affect the reliability and efficiency of the devices.
Innovation Solution
The implementation of a composite spacer structure comprising a dielectric structure, conductive spacers, and dielectric spacers, along with supporting structures within the metal structure, which adjusts the distance between the gate and source/drain regions to reduce leakage current and enhance manufacturing integration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the distance between gate and source/drain regions is reduced to improve device integration, then productivity and device density are improved, but leakage current increases and reliability deteriorates
Solution Approach 1:
The spacer structure is segmented into multiple layers: a first spacer layer and a second spacer layer with different materials and functions. The first spacer layer provides initial spacing while the second spacer layer provides additional spacing and leakage current control, allowing the gate-source/drain distance to be precisely controlled at a reduced scale without compromising reliability.
Solution Approach 2:
The patent employs composite spacer structures made of different materials (e.g., dielectric materials with different dielectric constants, or combinations of conductive and insulating materials) to achieve both compact dimensions and effective leakage current suppression. The composite structure allows optimization of each layer's material properties for different functions.
2Reliability
If supporting structures are added to reduce leakage current and improve reliability, then device performance is improved, but device complexity and manufacturing difficulty increase
Solution Approach 1:
The multi-layer spacer structure serves multiple functions simultaneously: it provides mechanical spacing between gate and source/drain regions, controls leakage current through material properties, and facilitates subsequent manufacturing processes. This multi-functionality reduces the need for separate supporting structures, thereby limiting the increase in device complexity.
Solution Approach 2:
The spacer structures are formed early in the manufacturing process sequence, establishing the gate-source/drain spacing and providing leakage current control before subsequent processing steps. This preliminary action simplifies later manufacturing steps by pre-defining critical dimensions and reducing the need for additional supporting structures.
3Reliability
If composite spacer structures with multiple layers are used to control leakage current, then reliability is improved, but manufacturing precision requirements increase
Solution Approach 1:
The first spacer layer acts as an intermediary between the gate structure and the second spacer layer, providing a foundation that simplifies the formation of the second spacer layer. The intermediary layer helps establish alignment references and reduces the precision requirements for forming subsequent layers, as each layer can be formed relative to the previous layer rather than requiring absolute precision.
Data Source
AI summary
A semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device comprises an insulating structure, a dielectric structure, a metal structure, a conductive spacer and a dielectric spacer. The dielectric structure is formed on the insulating structure. The metal structure is formed on and surrounded by the dielectric structure. A bottom surface and a lateral surface of the metal structure are in direct contact with the dielectric structure. The conductive spacer is formed on the insulating structure. The conductive spacer surrounds the dielectric structure. The dielectric spacer is formed on the insulating structure, wherein the dielectric spacer surrounds the conductive spacer.